Description
This N-channel Power MOSFET is based on the most innovative super-junction
MDmesh M9 technology, suitable for medium/high voltage MOSFETs featuring very
low RDS(on) per area. The silicon based M9 technology benefits from a multi-drain
manufacturing process which allows an enhanced device structure. The resulting
product has one of the lower on-resistance and reduced gate charge values,
among all silicon based fast switching super-junction Power MOSFETs, making
it particularly suitable for applications that require superior power density and
outstanding efficiency.

Features
• Worldwide best FOM RDS(on)*Qg among silicon-based devices
• Higher VDSS rating
• Higher dv/dt capability
• Excellent switching performance
• Easy to drive
• 100% avalanche tested
• Zener-protected

Applications
• High efficiency switching applications