STP60N043DM9 数据表(PDF) - STMicroelectronics

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STP60N043DM9 数据表 (PDF) - STMicroelectronics

STP60N043DM9 Datasheet PDF - STMicroelectronics


部件名	STP60N043DM9

下载	STP60N043DM9 下载

文件大小	227.41 Kbytes

页	12 Pages

制造商	STMICROELECTRONICS [STMicroelectronics]

网页	http://www.st.com

标志

功能描述	N-channel 600 V, 38 mΩ typ., 56 A MDmesh DM9 Power MOSFET in a TO-220 package

STP60N043DM9 Datasheet (PDF)

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STP60N043DM9 Datasheet PDF - STMicroelectronics


部件名	STP60N043DM9

下载	STP60N043DM9 Click to download

文件大小	227.41 Kbytes

页	12 Pages

制造商	STMICROELECTRONICS [STMicroelectronics]

网页	http://www.st.com

标志

功能描述	N-channel 600 V, 38 mΩ typ., 56 A MDmesh DM9 Power MOSFET in a TO-220 package

STP60N043DM9 数据表 (HTML) - STMicroelectronics

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STP60N043DM9 产品详情

Features
• Fast-recovery body diode
• Worldwide best RDS(on) per area among silicon-based fast recovery devices
• Low gate charge, input capacitance and resistance
• 100% avalanche tested
• Extremely high dv/dt ruggedness

Description
This N-channel Power MOSFET is based on the most innovative super-junction
MDmesh DM9 technology, suitable for medium/high voltage MOSFETs featuring
very low RDS(on) per area coupled with a fast-recovery diode. The silicon-based
DM9 technology benefits from a multi-drain manufacturing process which allows
an enhanced device structure. The fast-recovery diode featuring very low recovery
charge (Qrr), time (trr) and RDS(on) makes this fast-switching super-junction Power
MOSFET tailored for the most demanding high-efficiency bridge topologies and ZVS
phase-shift converters.

Applications
• Power supplies and converters
• LLC resonant converter

类似零件编号 - STP60N043DM9

制造商	部件名	数据表	功能描述
STMicroelectronics	STP60N05-14	77Kb / 5P	N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR Mar-1996
Inchange Semiconductor ...	STP60N05-14	371Kb / 2P	isc N-Channel MOSFET Transistor
STMicroelectronics	STP60N06	347Kb / 10P	N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR May-1993
STMicroelectronics	STP60N06-14	77Kb / 5P	N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR Mar-1996
Inchange Semiconductor ...	STP60N06-14	318Kb / 2P	Isc N-Channel MOSFET Transistor

类似说明 - STP60N043DM9

制造商	部件名	数据表	功能描述
STMicroelectronics	STP46N60M6	461Kb / 13P	N-channel 600 V, 68 m typ., 36 A, MDmesh M6 Power MOSFET in a TO‑220 package 22-Nov-2019
	STP65N045M9	228Kb / 12P	N-channel 650 V, 39 mΩ typ., 55 A MDmesh M9 Power MOSFET in a TO-220 package 25-May-2022
	STF46N60M6	456Kb / 12P	N-channel 600 V, 68 mΩ typ., 36 A, MDmesh M6 Power MOSFET in a TO‑220FP package 20-Nov-2019
	STB33N60DM6	424Kb / 14P	N-channel 600 V, 115 mΩ typ., 25 A, MDmesh DM6 Power MOSFET in a D2PAK package 02-Jul-2020
	STP80N240K6	255Kb / 13P	N-channel 800 V, 197 mΩ typ., 16 A MDmesh K6 Power MOSFET in a TO-220 package 29-Sep-2022
	STP65N150M9	233Kb / 12P	N-channel 650 V, 128 mΩ typ., 20 A MDmesh M9 Power MOSFET in a TO-220 package 22-Feb-2023
	STP80N340K6	292Kb / 13P	N-channel 800 V, 285 mΩ typ., 12 A MDmesh K6 Power MOSFET in a TO-220 package 28-Sep-2022
	STP80N450K6	270Kb / 13P	N-channel 800 V, 380 mΩ typ., 10 A MDmesh K6 Power MOSFET in a TO-220 package 15-Sep-2022
	STD7N60M6	384Kb / 15P	N-channel 600 V, 780 mΩ typ., 5 A, MDmesh M6 Power MOSFET in a DPAK package 28-Jul-2020
	STD9N60M6	328Kb / 15P	N‑channel 600 V 670 mΩ typ., 6 A MDmesh M6 Power MOSFET in a DPAK package 02-Nov-2020

关于 STMicroelectronics

Stmicroelectronics是位于瑞士日内瓦的跨国电子和半导体制造商。

该公司为汽车，工业和消费者市场的各种应用提供了广泛的产品，包括微控制器，传感器，功率放大器和集成电路。

Stmicroelectronics成立于1987年，在100多个国家 /地区开展业务，是世界上最大的半导体公司之一。

*此信息仅供一般参考，对于因上述信息造成的任何损失或损害，我们概不负责。

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