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STP60N043DM9 数据表(PDF) 5 Page - STMicroelectronics

部件名 STP60N043DM9
功能描述  N-channel 600 V, 38 mΩ typ., 56 A MDmesh DM9 Power MOSFET in a TO-220 package
PDF  12 Pages
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制造商  STMICROELECTRONICS [STMicroelectronics]
网页  http://www.st.com
标志 STMICROELECTRONICS - STMicroelectronics

STP60N043DM9 数据表(HTML) 5 Page - STMicroelectronics

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2.1
Electrical characteristics (curves)
Figure 1. Safe operating area
GADG090220221040SOA
10 2
10 1
10 0
10 -1
10 -2
10 -1
10 0
10 1
10 2
ID
(A)
VDS (V)
tp =1µs
tp =10µs
tp =100µs
tp =1ms
V(BR)DSS
Operation
in
this
area
is limited
by
RDS(on)
Single pulse
TJ ≤ 150 °C
TC = 25 °C
RDS(on) max.
IDM
tp =10ms
Figure 2. Maximum transient thermal impedance
GADG090220221040ZTH
10 -1
10 -2
10 -3
10 -6
10 -5
10 -4
10 -3
10 -2
10 -1
tp (s)
ton
T
duty = ton / T
RthJC = 0.51 °C/W
ZthJC
(°C/W)
duty=0.5
0.4
0.3
0.2
Single pulse
0.05
0.1
Figure 3. Typical output characteristics
GADG090220221040OCH
180
150
120
90
60
30
0
0
2
4
6
8
10
12
ID
(A)
VDS (V)
6 V
7 V
8 V
VGS = 9, 10 V
Figure 4. Typical transfer characteristics
GADG090220221041TCH
180
150
120
90
60
30
0
4
5
6
7
8
9
ID
(A)
VGS (V)
VDS = 15 V
Figure 5. Typical gate charge characteristics
GADG090220221041QVG
375
300
225
150
75
0
10
8
6
4
2
0
0
20
40
60
80
VDS
(V)
VGS
(V)
Qg (nC)
Qg
Qgs
Qgd
VDD = 480 V, ID = 15 A
VDS
VGS
Figure 6. Typical drain-source on-resistance
GADG090220221042RID
41
40
39
38
37
36
0
10
20
30
40
50
RDS(on)
(mΩ)
ID (A)
VGS = 10 V
STP60N043DM9
Electrical characteristics (curves)
DS13931 - Rev 2
page 5/12



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