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STP60N043DM9 数据表(PDF) 3 Page - STMicroelectronics

部件名 STP60N043DM9
功能描述  N-channel 600 V, 38 mΩ typ., 56 A MDmesh DM9 Power MOSFET in a TO-220 package
PDF  12 Pages
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制造商  STMICROELECTRONICS [STMicroelectronics]
网页  http://www.st.com
标志 STMICROELECTRONICS - STMicroelectronics

STP60N043DM9 数据表(HTML) 3 Page - STMicroelectronics

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2
Electrical characteristics
TC = 25 °C unless otherwise specified.
Table 4. On/off-states
Symbol
Parameter
Test conditions
Min.
Typ.
Max.
Unit
V(BR)DSS
Drain-source breakdown voltage
VGS = 0 V, ID = 1 mA
600
V
IDSS
Zero gate voltage drain current
VGS = 0 V, VDS = 600 V
5
μA
VGS = 0 V, VDS = 600 V, TC = 125 °C (1)
200
IGSS
Gate-body leakage current
VDS = 0 V, VGS = ±25 V
±100
nA
VGS(th)
Gate threshold voltage
VDS = VGS, ID = 250 μA
3.5
4.0
4.5
V
RDS(on)
Static drain-source on- resistance VGS = 10 V, ID = 28 A
38
43
mΩ
1. Specified by design, not tested in production.
Table 5. Dynamic characteristics
Symbol
Parameter
Test conditions
Min.
Typ.
Max.
Unit
Ciss
Input capacitance
VDS = 400 V, f = 1 MHz, VGS = 0 V
-
4675
-
pF
Coss
Output capacitance
-
82
-
pF
Coss eq.(1)
Equivalent output capacitance
VDS = 0 to 400 V, VGS = 0 V
-
729
-
pF
RG
Intrinsic gate resistance
f = 1 MHz, open drain
-
0.78
-
Ω
Qg
Total gate charge
VDD = 400 V, ID = 28 A, VGS = 0 to 10 V
(see Figure 15. Test circuit for gate
charge behavior)
-
78.6
-
nC
Qgs
Gate-source charge
-
29
-
nC
Qgd
Gate-drain charge
-
20
-
nC
1. Coss eq is defined as a constant equivalent capacitance giving the same charging time as Coss when VDS increases from 0
to 80% VDSS.
Table 6. Switching times
Symbol
Parameter
Test conditions
Min.
Typ.
Max.
Unit
td(v)
Voltage delay time
VDD = 400 V, ID = 28 A,
RG = 4.7 Ω , VGS = 10 V
(see Figure 16. Test circuit for inductive
load switching and diode recovery times
and Figure 17. Turn-off switching time
waveform on inductive load)
-
34
-
ns
tr(v)
Voltage rise time
-
29
-
ns
tf(i)
Current fall time
-
48
-
ns
tc(off)
Crossing time off
-
10
-
ns
td(v)
Current delay time
VDD = 400 V, ID = 28 A,
RG = 4.7 Ω , VGS = 10 V
(see Figure 16. Test circuit for inductive
load switching and diode recovery times
and Figure 18. Turn-on switching time
waveform on inductive load)
-
75
-
ns
tr(i)
Current rise time
-
3.5
-
ns
tf(v)
Voltage fall time
-
9
-
ns
tc(on)
Crossing time on
-
38
-
ns
STP60N043DM9
Electrical characteristics
DS13931 - Rev 2
page 3/12



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