STP60N043DM9 datasheet(1/12 Pages) STMICROELECTRONICS

部件名	STP60N043DM9

功能描述	N-channel 600 V, 38 mΩ typ., 56 A MDmesh DM9 Power MOSFET in a TO-220 package

PDF	12 Pages

Scroll/Zoom	100%

制造商	STMICROELECTRONICS [STMicroelectronics]

网页	http://www.st.com

标志

1 / 12 page

1

2

3

TO-220

TAB

AM01475v1_noZen

D(2, TAB)

G(1)

S(3)

Features

Order code

VDS

RDS(on) max.

ID

STP60N043DM9

600 V

43 mΩ

56 A

•

Fast-recovery body diode

•

Worldwide best RDS(on) per area among silicon-based fast recovery devices

•

Low gate charge, input capacitance and resistance

•

100% avalanche tested

•

Extremely high dv/dt ruggedness

Applications

•

Power supplies and converters

•

LLC resonant converter

Description

This N-channel Power MOSFET is based on the most innovative super-junction

MDmesh DM9 technology, suitable for medium/high voltage MOSFETs featuring

very low RDS(on) per area coupled with a fast-recovery diode. The silicon-based

DM9 technology benefits from a multi-drain manufacturing process which allows

an enhanced device structure. The fast-recovery diode featuring very low recovery

charge (Qrr), time (trr) and RDS(on) makes this fast-switching super-junction Power

MOSFET tailored for the most demanding high-efficiency bridge topologies and ZVS

phase-shift converters.

Product status link

STP60N043DM9

Product summary

Order code

STP60N043DM9

Marking

60N043DM9

Package

TO-220

Packing

Tube

N-channel 600 V, 38 mΩ typ., 56 A MDmesh DM9 Power MOSFET

in a TO-220 package

STP60N043DM9

Datasheet

DS13931 - Rev 2 - September 2022

For further information contact your local STMicroelectronics sales office.

www.st.com

类似零件编号 - STP60N043DM9

制造商	部件名	数据表	功能描述
STMicroelectronics	STP60N05-14	77Kb / 5P	N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR Mar-1996
Inchange Semiconductor ...	STP60N05-14	371Kb / 2P	isc N-Channel MOSFET Transistor
STMicroelectronics	STP60N06	347Kb / 10P	N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR May-1993
STMicroelectronics	STP60N06-14	77Kb / 5P	N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR Mar-1996
Inchange Semiconductor ...	STP60N06-14	318Kb / 2P	Isc N-Channel MOSFET Transistor

More results

类似说明 - STP60N043DM9

制造商	部件名	数据表	功能描述
STMicroelectronics	STP46N60M6	461Kb / 13P	N-channel 600 V, 68 m typ., 36 A, MDmesh M6 Power MOSFET in a TO‑220 package 22-Nov-2019
	STP65N045M9	228Kb / 12P	N-channel 650 V, 39 mΩ typ., 55 A MDmesh M9 Power MOSFET in a TO-220 package 25-May-2022
	STF46N60M6	456Kb / 12P	N-channel 600 V, 68 mΩ typ., 36 A, MDmesh M6 Power MOSFET in a TO‑220FP package 20-Nov-2019
	STB33N60DM6	424Kb / 14P	N-channel 600 V, 115 mΩ typ., 25 A, MDmesh DM6 Power MOSFET in a D2PAK package 02-Jul-2020
	STP80N240K6	255Kb / 13P	N-channel 800 V, 197 mΩ typ., 16 A MDmesh K6 Power MOSFET in a TO-220 package 29-Sep-2022
	STP65N150M9	233Kb / 12P	N-channel 650 V, 128 mΩ typ., 20 A MDmesh M9 Power MOSFET in a TO-220 package 22-Feb-2023
	STP80N340K6	292Kb / 13P	N-channel 800 V, 285 mΩ typ., 12 A MDmesh K6 Power MOSFET in a TO-220 package 28-Sep-2022
	STP80N450K6	270Kb / 13P	N-channel 800 V, 380 mΩ typ., 10 A MDmesh K6 Power MOSFET in a TO-220 package 15-Sep-2022
	STD7N60M6	384Kb / 15P	N-channel 600 V, 780 mΩ typ., 5 A, MDmesh M6 Power MOSFET in a DPAK package 28-Jul-2020
	STD9N60M6	328Kb / 15P	N‑channel 600 V 670 mΩ typ., 6 A MDmesh M6 Power MOSFET in a DPAK package 02-Nov-2020

More results

STP60N043DM9 数据表(PDF) 1 Page - STMicroelectronics

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