STP60N043DM9 datasheet(2/12 Pages) STMICROELECTRONICS

部件名	STP60N043DM9

功能描述	N-channel 600 V, 38 mΩ typ., 56 A MDmesh DM9 Power MOSFET in a TO-220 package

PDF	12 Pages

Scroll/Zoom	100%

制造商	STMICROELECTRONICS [STMicroelectronics]

网页	http://www.st.com

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Electrical ratings

Table 1. Absolute maximum ratings

Symbol

Parameter

Value

Unit

VGS

Gate-source voltage

±30

ID(1)

Drain current (continuous) at TC = 25 °C

Drain current (continuous) at TC = 100 °C

IDM(2)

Drain current (pulsed)

175

PTOT

Total power dissipation at TC = 25 °C

245

dv/dt(3)

Peak diode recovery voltage slope

120

V/ns

di/dt(3)

Peak diode recovery current slope

1300

A/μs

dv/dt(4)

MOSFET dv/dt ruggedness

120

V/ns

Tstg

Storage temperature range

-55 to 150

°C

Operating junction temperature range

°C

1. Referred to TO-247 package.

2. Pulse width limited by safe operating area.

3. ISD ≤ 28 A, VDS (peak) < V(BR)DSS, VDD = 400 V.

4. VDS ≤ 400 V.

Table 2. Thermal data

Symbol

Parameter

Value

Unit

RthJC

Thermal resistance, junction-to-case

0.51

°C/W

RthJA

Thermal resistance, junction-to-ambient

62.5

°C/W

Table 3. Avalanche characteristics

Symbol

Parameter

Value

Unit

IAR

Avalanche current, repetitive or not repetitive

(pulse width limited by TJ max.)

EAS

Single pulse avalanche energy

(starting TJ = 25 °C, ID = IAR, VDD = 50 V)

775

STP60N043DM9

Electrical ratings

DS13931 - Rev 2

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