STP60N043DM9 datasheet(7/12 Pages) STMICROELECTRONICS

部件名	STP60N043DM9

功能描述	N-channel 600 V, 38 mΩ typ., 56 A MDmesh DM9 Power MOSFET in a TO-220 package

PDF	12 Pages

Scroll/Zoom	100%

制造商	STMICROELECTRONICS [STMicroelectronics]

网页	http://www.st.com

标志

7 / 12 page

Test circuits

Figure 13. Unclamped inductive load test circuit

AM01471v1

D.U.T.

VDD

pulse width

3.3

µF

2200

µF

Figure 14. Unclamped inductive waveform

AM01472v1

V(BR)DSS

VDD

IDM

Figure 15. Test circuit for gate charge behavior

AM01469v10

47 kΩ

2.7 kΩ

1 kΩ

G= CONST

100 Ω

D.U.T.

pulse width

VGS

2200

μF

VDD

Figure 16. Test circuit for inductive load switching and

diode recovery times

AM01470v1

D.U.T.

25 Ω

100 µH

µF

3.3

1000

µF

VDD

D.U.T.

fast

diode

Figure 17. Turn-off switching time waveform

on inductive load

AM05540v3

VGS

VDS

90%ID

10%ID

90%VDS

10%VDS

90%VGS

tf(i)

tr(v)

tc(off)

td(v)

Figure 18. Turn-on switching time waveform

on inductive load

GADG241120211046SWTW

90%VDS

10%VDS

90%ID

10%ID

10%VGS

90%VGS

VDS

tc(on)

td(i)

tf(v)

tr(i)

STP60N043DM9

Test circuits

DS13931 - Rev 2

page 7/12

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