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STP60N043DM9 数据表(PDF) 6 Page - STMicroelectronics

部件名 STP60N043DM9
功能描述  N-channel 600 V, 38 mΩ typ., 56 A MDmesh DM9 Power MOSFET in a TO-220 package
PDF  12 Pages
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制造商  STMICROELECTRONICS [STMicroelectronics]
网页  http://www.st.com
标志 STMICROELECTRONICS - STMicroelectronics

STP60N043DM9 数据表(HTML) 6 Page - STMicroelectronics

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Figure 7. Typical capacitance characteristics
GADG090220221041CVR
10 4
10 3
10 2
10 1
10 0
10 -1
10 0
10 1
10 2
C
(pF)
VDS (V)
Ciss
Coss
Crss
f = 1 MHz
Figure 8. Typical output capacitance stored energy
GADG090220221046EOS
30
25
20
15
10
5
0
0
100 200 300 400 500 600
Eoss
(µJ)
VDS (V)
Figure 9. Normalized gate threshold vs temperature
GADG090220221043VTH
1.1
1.0
0.9
0.8
0.7
0.6
-75
-25
25
75
125
VGS(th)
(norm.)
TJ (°C)
ID = 250 µA
Figure 10. Normalized on-resistance vs temperature
GADG090220221043RON
2.5
2.0
1.5
1.0
0.5
0.0
-75
-25
25
75
125
RDS(on)
(norm.)
TJ (°C)
VGS = 10 V
Figure 11. Normalized breakdown voltage vs temperature
GADG090220221043BDV
1.10
1.05
1.00
0.95
0.90
0.85
-75
-25
25
75
125
V(BR)DSS
(norm.)
TJ (°C)
ID = 1 mA
Figure 12. Typical reverse diode forward characteristics
GADG090220221044SDF
1.1
1.0
0.9
0.8
0.7
0.6
0.5
0
10
20
30
40
50
VSD
(V)
ISD (A)
TJ = -50 °C
TJ = 25 °C
TJ = 150 °C
STP60N043DM9
Electrical characteristics (curves)
DS13931 - Rev 2
page 6/12



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