RF Power Field Effect Transistors
N−Channel Enhancement−Mode Lateral MOSFETs

Designed for broadband commercial and industrial applications with frequencies up to 1000 MHz. The high gain and broadband performance of these devices make them ideal for large−signal, common−source amplifier applications in 26 volt base station equipment.

• Typical Two−Tone Performance at 945 MHz, 26 Volts
   Output Power — 60 Watts PEP
   Power Gain — 17 dB
   Efficiency — 40%
   IMD — −31 dBc
• Integrated ESD Protection
• Designed for Maximum Gain and Insertion Phase Flatness
• Capable of Handling 10:1 VSWR, @ 26 Vdc, 945 MHz, 60 Watts CW
   Output Power
• Excellent Thermal Stability
• Characterized with Series Equivalent Large−Signal Impedance Parameters
• In Tape and Reel. R1 Suffix = 500 Units per 32 mm, 13 inch Reel.
• Low Gold Plating Thickness on Leads. L Suffix Indicates 40µ″ Nominal.