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2SC5761-T2 数据表 (PDF) - Renesas Technology Corp
2SC5761-T2 Datasheet PDF - Renesas Technology Corp
部件名 2SC5761-T2
下载  2SC5761-T2 下载
文件大小   305.1 Kbytes
页   16 Pages
制造商  RENESAS [Renesas Technology Corp]
网页  http://www.renesas.com
标志 RENESAS - Renesas Technology Corp
功能描述 NPN SiGe RF TRANSISTOR FOR LOW NOISE ⋅ HIGH-GAIN AMPLIFICATION

2SC5761-T2 Datasheet (PDF)

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2SC5761-T2 Datasheet PDF - Renesas Technology Corp

部件名 2SC5761-T2
下载  2SC5761-T2 Click to download

文件大小   305.1 Kbytes
页   16 Pages
制造商  RENESAS [Renesas Technology Corp]
网页  http://www.renesas.com
标志 RENESAS - Renesas Technology Corp
功能描述 NPN SiGe RF TRANSISTOR FOR LOW NOISE ⋅ HIGH-GAIN AMPLIFICATION

2SC5761-T2 数据表 (HTML) - Renesas Technology Corp


2SC5761-T2 产品详情

FEATURES
• Ideal for low noise ⋅ high-gain amplification
NF = 0.9 dB TYP. @ VCE = 2 V, IC = 5 mA, f = 2 GHz
• Maximum stable power gain: MSG = 20.0 dB TYP. @ VCE = 2 V, IC = 20 mA, f = 2 GHz
• SiGe technology (fT = 60 GHz, fmax = 60 GHz)
• Flat-lead 4-pin thin-type super minimold (M04) package




类似零件编号 - 2SC5761-T2

制造商部件名数据表功能描述
logo
NEC		 2SC5761-T2 NEC-2SC5761-T2 Datasheet
81Kb / 14P		 NPN SiGe RF TRANSISTOR FOR LOW NOISE & HIGH-GAIN AMPLIFICATION FLAT-LEAD 4-PIN THIN-TYPE SUPER MINIMOLD (M04)
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类似说明 - 2SC5761-T2

制造商部件名数据表功能描述
logo
NEC		 NESG2046M33 NEC-NESG2046M33 Datasheet
118Kb / 3P		 NECs NPN SiGe TRANSISTOR FOR LOW NOISE, HIGH -GAIN AMPLIFICATION
NESG204619 NEC-NESG204619 Datasheet
116Kb / 3P		 NECs NPN SiGe TRANSISTOR FOR LOW NOISE, HIGH-GAIN AMPLIFICATION
NESG210719 NEC-NESG210719 Datasheet
114Kb / 3P		 NECs NPN SiGe TRANSISTOR FOR LOW NOISE, HIGH-GAIN AMPLIFICATION
logo
California Eastern Labs		 NESG2046M33 CEL-NESG2046M33 Datasheet
292Kb / 4P		 NPN SiGe TRANSISTOR FOR LOW NOISE, HIGH -GAIN AMPLIFICATION
NESG204619 CEL-NESG204619 Datasheet
320Kb / 4P		 NPN SiGe TRANSISTOR FOR LOW NOISE, HIGH-GAIN AMPLIFICATION
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Renesas Technology Corp		 NESG2021M05 RENESAS-NESG2021M05 Datasheet
159Kb / 14P		 NPN SiGe RF Transistor for Low Noise, High-Gain Amplification
NESG2031M05 RENESAS-NESG2031M05 Datasheet
158Kb / 14P		 NPN SiGe RF Transistor for Low Noise, High-Gain Amplification
NESG3032M14 RENESAS-NESG3032M14 Datasheet
168Kb / 15P		 NPN SiGe RF Transistor for Low Noise, High-Gain
NESG3033M14 RENESAS-NESG3033M14 Datasheet
176Kb / 16P		 NPN SiGe RF Transistor for Low Noise, High-Gain
NESG210719 RENESAS-NESG210719 Datasheet
124Kb / 10P		 NPN SiGe RF Transistor for Low Noise, High-Gain
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关于 Renesas Technology Corp

Renesas Technology Corp是一家日本半导体公司，可为汽车，工业和消费者市场中的各种应用提供广泛的微控制器，芯片以及模拟和电源设备。
该公司于2010年通过NEC Electronics Corporation and Renesas Technology Corporation合并成立。
Renesas是世界上最大的微控制器供应商之一，并以其在物联网（IoT），人工智能（AI）和汽车电子产品等领域的高级技术开发方面的专业知识而闻名。
该公司在20多个国家 /地区开展业务，其产品用于广泛的应用。

*此信息仅供一般参考，对于因上述信息造成的任何损失或损害，我们概不负责。




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