STGWA80H65DFBAG 数据表(PDF) - STMicroelectronics

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STGWA80H65DFBAG 数据表 (PDF) - STMicroelectronics

STGWA80H65DFBAG Datasheet PDF - STMicroelectronics


部件名	STGWA80H65DFBAG

下载	STGWA80H65DFBAG 下载

文件大小	280.59 Kbytes

页	14 Pages

制造商	STMICROELECTRONICS [STMicroelectronics]

网页	http://www.st.com

标志

功能描述	Automotive-grade trench gate field-stop 650 V, 80 A high speed HB series IGBT in a TO-247 long leads

STGWA80H65DFBAG Datasheet (PDF)

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STGWA80H65DFBAG Datasheet PDF - STMicroelectronics


部件名	STGWA80H65DFBAG

下载	STGWA80H65DFBAG Click to download

文件大小	280.59 Kbytes

页	14 Pages

制造商	STMICROELECTRONICS [STMicroelectronics]

网页	http://www.st.com

标志

功能描述	Automotive-grade trench gate field-stop 650 V, 80 A high speed HB series IGBT in a TO-247 long leads

STGWA80H65DFBAG 数据表 (HTML) - STMicroelectronics

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STGWA80H65DFBAG 产品详情

Features
• AEC-Q101 qualified
• High-speed switching series
• Maximum junction temperature: TJ = 175 °C
• Low VCE(sat) = 1.65 V (typ.) @ IC = 80 A
• Minimized tail current
• Tight parameter distribution
• Positive temperature VCE(sat) coefficient
• Soft and very fast recovery antiparallel diode

Applications
• PFC
• High frequency converters

Description
This device is an IGBT developed using an advanced proprietary trench gate fieldstop
structure. The device is part of the new HB series of IGBTs, which represents
an optimum compromise between conduction and switching loss to maximize the
efficiency of any frequency converter. Furthermore, the slightly positive VCE(sat)
temperature coefficient and very tight parameter distribution result in safer paralleling
operation.

类似零件编号 - STGWA80H65DFBAG

制造商	部件名	数据表	功能描述
STMicroelectronics	STGWA80H65DFB	908Kb / 17P	Tight parameter distribution 17-Nov-2016
STMicroelectronics	STGWA80H65DFB	1Mb / 22P	Trench gate field-stop IGBT, HB series 650 V, 80 A high speed May 2015 Rev 6

类似说明 - STGWA80H65DFBAG

制造商	部件名	数据表	功能描述
STMicroelectronics	STGWT40HP65FB	909Kb / 17P	Trench gate field-stop IGBT, HB series 650 V, 40 A high speed 13-Jul-2016
	STGFW20H65FB	1Mb / 20P	Trench gate field-stop IGBT, HB series 650 V, 20 A high speed 28-Aug-2014
	STGY80H65DFB	1Mb / 22P	Trench gate field-stop IGBT, HB series 650 V, 80 A high speed May 2015 Rev 6
	STGWA20HP65FB2	373Kb / 15P	Trench gate field-stop, 650 V, 20 A, high-speed HB2 series IGBT in a TO‑247 long leads package 11-May-2020
	STGWA30H65DFB2	513Kb / 15P	Trench gate field-stop, 650 V, 30 A, high-speed HB2 series IGBT in a TO-247 long leads package 13-Feb-2020
	STGWA40H60DLFB	871Kb / 15P	Trench gate field-stop IGBT, HB series 600 V, 40 A high speed in a TO-247 long leads package 03-Mar-2017
	STGWA40HP65FB2	516Kb / 16P	Trench gate field-stop, 650 V, 40 A, high-speed HB2 series IGBT in a TO-247 long leads package 24-Jul-2019
	STGWA50HP65FB2	542Kb / 15P	Trench gate field-stop, 650 V, 50 A, high-speed HB2 series IGBT in a TO-247 long leads package 05-Dec-2019
	STGWA75H65DFB2	560Kb / 15P	Trench gate field-stop, 650 V, 75 A, high-speed HB2 series IGBT in a TO‑247 long leads package 13-Feb-2020
	STGWA80H65FBAG	257Kb / 12P	Automotive-grade trench gate field-stop 650 V, 80 A high speed HB series IGBT in a TO-247 long leads 16-Feb-2023

关于 STMicroelectronics

Stmicroelectronics是位于瑞士日内瓦的跨国电子和半导体制造商。

该公司为汽车，工业和消费者市场的各种应用提供了广泛的产品，包括微控制器，传感器，功率放大器和集成电路。

Stmicroelectronics成立于1987年，在100多个国家 /地区开展业务，是世界上最大的半导体公司之一。

*此信息仅供一般参考，对于因上述信息造成的任何损失或损害，我们概不负责。

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