STGWA80H65DFBAG datasheet(3/14 Pages) STMICROELECTRONICS

部件名	STGWA80H65DFBAG

功能描述	Automotive-grade trench gate field-stop 650 V, 80 A high speed HB series IGBT in a TO-247 long leads

PDF	14 Pages

Scroll/Zoom	100%

制造商	STMICROELECTRONICS [STMicroelectronics]

网页	http://www.st.com

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Electrical characteristics

TJ = 25 °C unless otherwise specified.

Table 3. Static characteristics

Symbol

Parameter

Test conditions

Min.

Typ.

Max.

Unit

VCE(sat)

Collector-emitter saturation

voltage

VGE = 15 V, IC = 80 A

1.65

2.0

VGE = 15 V, IC = 80 A, TJ = 125 °C

1.8

VGE = 15 V, IC = 80 A, TJ = 175 °C

1.9

Forward on-voltage

IF = 80 A

1.9

IF = 80 A, TJ = 125 °C

1.55

IF = 80 A, TJ = 175 °C

1.4

VGE(th)

Gate threshold voltage

VCE = VGE, IC = 1 mA

4.5

5.5

6.5

Table 4. Dynamic characteristics

Symbol

Parameter

Test conditions

Min.

Typ.

Max.

Unit

Cies

Input capacitance

VCE = 25 V, f = 1 MHz, VGE = 0 V

10460

Coes

Output capacitance

390

Cres

Reverse transfer capacitance

215

Total gate charge

VCC = 520 V, IC = 80 A, VGE = 0 to 15 V

453

STGWA80H65DFBAG

Electrical characteristics

DS14160 - Rev 1

page 3/14

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