N-CHANNEL SILICON POWER LDMOS FET
FOR UHF-BAND PDESCRIPTION
The NEM090853P-28 is an N-channel enhancement-mode lateral MOS FET designed for 0.8 to 1.0 GHz, 90 W
single-end power amplifier applications, such as, GSM/EDGE/N-CDMA cellular base station. Dies are manufactured
using our NEWMOS technology (our WSi gate lateral MOS FET), and its nitride surface passivation and triple layer
aluminum silicon metalization offer a high degree of reliability.
FEATURES
• High 1 dB compression output power : PO (1 dB) = 90 W TYP. (VDS = 28 V, IDset = 800 mA, f = 920 to 960 MHz CW)
• High linear gain : GL = 19.5 dB TYP. (VDS = 28 V, IDset = 800 mA, f = 920 to 960 MHz CW)
• High drain efficiency : ηd = 57% TYP. (VDS = 28 V, IDset = 800 mA, f = 920 to 960 MHz CW)
• Low intermodulation distortion : IM3 = −37 dBc TYP. (VDS = 28 V, IDset = 800 mA, f = 960/960.1 MHz,
Pout = 43 dBm (2 tones) )
: IM3 = −45 dBc TYP. (VDS = 28 V, IDset = 800 mA, f = 880/880.1 MHz,
Pout = 40 dBm (2 tones) )
• Internal matched (Input and Output) for ease of use
• Low cost hollow plastic packages
• 100% screening
• Integrated ESD protection
• Effective prevention against humidity
• Excellent stability against HCI (Hot Carrier Injection)
APPLICATION
• Digital cellular base station PA : GSM/EDGE/N-CDMA etc.OWER AMPLIFIER