| 制造商 | 部件名 | 数据表 | 功能描述 |
 Ericsson |
PTF10100
|
163Kb / 6P |
165 Watts, 860-900 MHz LDMOS Field Effect Transistor
|
 Infineon Technologies A... |
PTFC270101M
|
409Kb / 21P |
High Power RF LDMOS Field Effect Transistor
Rev. 04, 2015-04-01 |
|
PXAC243502FV
|
1Mb / 10P |
High Power RF LDMOS Field Effect Transistor
Rev. 03.1, 2015-04-13 |
|
PTFB183408SV
|
248Kb / 15P |
High Power RF LDMOS Field Effect Transistor
Rev. 03, 2014-03-07 |
|
PTFB201402FC
|
841Kb / 14P |
High Power RF LDMOS Field Effect Transistor
Rev. 03.1, 2016-06-14 |
 Renesas Technology Corp |
NEM090303M-28
|
295Kb / 12P |
LDMOS FIELD EFFECT TRANSISTOR
2003 |
|
NEM090603M-28
|
302Kb / 11P |
LDMOS FIELD EFFECT TRANSISTOR
2006 |
|
NEM091203P-28
|
310Kb / 13P |
LDMOS FIELD EFFECT TRANSISTOR
2005 |
|
NEM091603P-28
|
306Kb / 11P |
LDMOS FIELD EFFECT TRANSISTOR
2008 |
|
NEM091803S-28
|
271Kb / 9P |
LDMOS FIELD EFFECT TRANSISTOR
2004 |