FEATURES
Double internal input matching for easy matching and
high gain
Emitter ballasting resistors for an optimum temperature
profile
Gold metallization ensures excellent reliability.

APPLICATIONS
Base station transmitters in the 900 to 960 MHz range.

DESCRIPTION
Two NPN silicon planar epitaxial transistors in push-pull
contfiguration, intended for linear common emitter
class-AB operation. The device has double internal input
matching. The transistor is encapsulated in a 4-lead
SOT324 flange envelope with a ceramic cap. The flange
provides the common emitter connection for both
transistors.