DESCRIPTION
Two NPN silicon planar epitaxial transistors in push-pull configuration, intended for linear common emitter class-AB operation. The transistors are encapsulated in a 4-lead SOT262A2 flange package with 2 ceramic caps. The flange provides the common emitter connection for both transistors.

FEATURES
• Internal input and output matching for easy matching, high gain and efficiency
• Poly-silicon emitter ballasting resistors for an optimum temperature profile
• Gold metallization ensures excellent reliability.

APPLICATIONS
• Base station transmitters in the 800 to 960 MHz range.