DESCRIPTION
NPN silicon planar epitaxial transistors primarily intended for common emitter class-AB operation. The transistors have internal input and output matching by means of MOS capacitors. The encapsulations are a 2-lead rectangular SOT391A flange package and a SOT391B flangeless package, both with a ceramic cap.

FEATURES
• Internal input and output matching for easy matching, high gain and efficiency
• Poly-silicon emitter ballasting resistors for an optimum temperature profile
• Gold metallization ensures excellent reliability.

APPLICATIONS
• Base stations in the 800 to 960 MHz frequency range.