PTFC210202FC-V1-R250 数据表(PDF) - WOLFSPEED, INC.

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PTFC210202FC-V1-R250 数据表 (PDF) - WOLFSPEED, INC.

PTFC210202FC-V1-R250 Datasheet PDF - WOLFSPEED, INC.


部件名	PTFC210202FC-V1-R250

下载	PTFC210202FC-V1-R250 下载

文件大小	828.24 Kbytes

页	9 Pages

制造商	WOLFSPEED [WOLFSPEED, INC.]

网页	https://www.wolfspeed.com/

标志

功能描述	Thermally-Enhanced High Power RF LDMOS FET 28 W, 28 V, 1800 – 2200 MHz

PTFC210202FC-V1-R250 Datasheet (PDF)

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PTFC210202FC-V1-R250 Datasheet PDF - WOLFSPEED, INC.


部件名	PTFC210202FC-V1-R250

下载	PTFC210202FC-V1-R250 Click to download

文件大小	828.24 Kbytes

页	9 Pages

制造商	WOLFSPEED [WOLFSPEED, INC.]

网页	https://www.wolfspeed.com/

标志

功能描述	Thermally-Enhanced High Power RF LDMOS FET 28 W, 28 V, 1800 – 2200 MHz

PTFC210202FC-V1-R250 数据表 (HTML) - WOLFSPEED, INC.

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PTFC210202FC-V1-R250 Datasheet HTML 9Page - WOLFSPEED, INC.

PTFC210202FC-V1-R250 产品详情

Description
The PTFC210202FC integrates two independent 10-watt LDMOS FETs and
is designed for use in cellular amplifier applications in the 2110 to 2170
MHz frequency band. Manufactured with Wolfspeed's advanced LDMOS
process, this device provides excellent thermal performance and superior
reliability
Features
• Input matched
• Typical CW performance, 2170 MHz, 28 V,
combined outputs
- Output power at P1dB = 28 W
- Efficiency = 62%
- Gain = 20.9 dB
• Capable of handling 10:1 VSWR @28 V, 28 W (CW) output power
• Integrated ESD protection : Human Body Model, Class
1C (per JESD22-A114)
• Low thermal resistance
• Pb-free and RoHS compliant

类似零件编号 - PTFC210202FC-V1-R250

制造商	部件名	数据表	功能描述
Infineon Technologies A...	PTFC210202FC	431Kb / 9P	Thermally-Enhanced High Power RF LDMOS FET Rev. 03.2, 2014-05-14
Infineon Technologies A...	PTFC210202FC	655Kb / 9P	Thermally-Enhanced High Power RF LDMOS FET 28 W, 28 V, 1800 ??2200 MHz Rev. 03.4, 2016-06-22
Cree, Inc	PTFC210202FC	700Kb / 9P	Thermally-Enhanced High Power RF LDMOS FET 28 W, 28 V, 1800 - 2200 MHz
Infineon Technologies A...	PTFC210202FCV1R0	655Kb / 9P	Thermally-Enhanced High Power RF LDMOS FET 28 W, 28 V, 1800 ??2200 MHz Rev. 03.4, 2016-06-22
Infineon Technologies A...	PTFC210202FCV1R0XTMA1	655Kb / 9P	Thermally-Enhanced High Power RF LDMOS FET 28 W, 28 V, 1800 ??2200 MHz Rev. 03.4, 2016-06-22

类似说明 - PTFC210202FC-V1-R250

制造商	部件名	数据表	功能描述
Infineon Technologies A...	PXFC192207FH	1Mb / 9P	Thermally-Enhanced High Power RF LDMOS FET 220 W, 28 V, 1805 ??1990 MHz Rev. 04.1, 2016-06-22
	PXAC261212FC	1Mb / 10P	Thermally-Enhanced High Power RF LDMOS FET 120 W, 28 V, 2496 ??2690 MHz Rev. 02.2, 2016-06-22
	PXAC201202FC	1Mb / 10P	Thermally-Enhanced High Power RF LDMOS FET 120 W, 28 V, 1800 ??2200 MHz Rev. 05.1, 2016-06-22
	PTFC210202FC	655Kb / 9P	Thermally-Enhanced High Power RF LDMOS FET 28 W, 28 V, 1800 ??2200 MHz Rev. 03.4, 2016-06-22
	PXAC213308FV	1Mb / 8P	Thermally-Enhanced High Power RF LDMOS FET 320 W, 28 V, 2110 ??2200 MHz Rev. 02, 2016-05-04
	PXAC210552ND	466Kb / 9P	Thermally-Enhanced High Power RF LDMOS FET 55 W, 28 V, 1805 ??2170 MHz Rev. 04.1, 2017-01-09
	PXAD184218FV	339Kb / 9P	Thermally-Enhanced High Power RF LDMOS FET 420 W, 28 V, 1805 ??1880 MHz Rev. 02.1, 2016-12-07
Cree, Inc	PXAC213308FV	518Kb / 8P	Thermally-Enhanced High Power RF LDMOS FET 320 W, 28 V, 2110 ??2200 MHz
	PXAC201202FC	590Kb / 10P	Thermally-Enhanced High Power RF LDMOS FET 120 W, 28 V, 1800 - 2200 MHz
	PTFC210202FC	700Kb / 9P	Thermally-Enhanced High Power RF LDMOS FET 28 W, 28 V, 1800 - 2200 MHz

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