| 制造商 | 部件名 | 数据表 | 功能描述 |
 Infineon Technologies A... |
PXFC192207FH
|
1Mb / 9P |
Thermally-Enhanced High Power RF LDMOS FET 220 W, 28 V, 1805 ??1990 MHz
Rev. 04.1, 2016-06-22 |
|
PXAC261212FC
|
1Mb / 10P |
Thermally-Enhanced High Power RF LDMOS FET 120 W, 28 V, 2496 ??2690 MHz
Rev. 02.2, 2016-06-22 |
|
PXAC201202FC
|
1Mb / 10P |
Thermally-Enhanced High Power RF LDMOS FET 120 W, 28 V, 1800 ??2200 MHz
Rev. 05.1, 2016-06-22 |
|
PTFC210202FC
|
655Kb / 9P |
Thermally-Enhanced High Power RF LDMOS FET 28 W, 28 V, 1800 ??2200 MHz
Rev. 03.4, 2016-06-22 |
|
PXAC213308FV
|
1Mb / 8P |
Thermally-Enhanced High Power RF LDMOS FET 320 W, 28 V, 2110 ??2200 MHz
Rev. 02, 2016-05-04 |
|
PXAC210552ND
|
466Kb / 9P |
Thermally-Enhanced High Power RF LDMOS FET 55 W, 28 V, 1805 ??2170 MHz
Rev. 04.1, 2017-01-09 |
|
PXAD184218FV
|
339Kb / 9P |
Thermally-Enhanced High Power RF LDMOS FET 420 W, 28 V, 1805 ??1880 MHz
Rev. 02.1, 2016-12-07 |
 Cree, Inc |
PXAC213308FV
|
518Kb / 8P |
Thermally-Enhanced High Power RF LDMOS FET 320 W, 28 V, 2110 ??2200 MHz
|
|
PXAC201202FC
|
590Kb / 10P |
Thermally-Enhanced High Power RF LDMOS FET 120 W, 28 V, 1800 - 2200 MHz
|
|
PTFC210202FC
|
700Kb / 9P |
Thermally-Enhanced High Power RF LDMOS FET 28 W, 28 V, 1800 - 2200 MHz
|