GTRA412852FC-V1-R2 数据表(PDF) - WOLFSPEED, INC.

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GTRA412852FC-V1-R2 数据表 (PDF) - WOLFSPEED, INC.

GTRA412852FC-V1-R2 Datasheet PDF - WOLFSPEED, INC.


部件名	GTRA412852FC-V1-R2

下载	GTRA412852FC-V1-R2 下载

文件大小	967.42 Kbytes

页	14 Pages

制造商	WOLFSPEED [WOLFSPEED, INC.]

网页	https://www.wolfspeed.com/

标志

功能描述	Thermally-Enhanced High Power RF GaN on SiC HEMT 235 W, 48 V, 3700 – 4100 MHz

GTRA412852FC-V1-R2 Datasheet (PDF)

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GTRA412852FC-V1-R2 Datasheet PDF - WOLFSPEED, INC.


部件名	GTRA412852FC-V1-R2

下载	GTRA412852FC-V1-R2 Click to download

文件大小	967.42 Kbytes

页	14 Pages

制造商	WOLFSPEED [WOLFSPEED, INC.]

网页	https://www.wolfspeed.com/

标志

功能描述	Thermally-Enhanced High Power RF GaN on SiC HEMT 235 W, 48 V, 3700 – 4100 MHz

GTRA412852FC-V1-R2 数据表 (HTML) - WOLFSPEED, INC.

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GTRA412852FC-V1-R2 产品详情

Description
The GTRA412852FC is a 235-watt (P3dB) GaN on SiC high electron
mobility transistor (HEMT) for use in multi-standard cellular power
amplifier applications. It features input and output matching, high
efficiency, and a thermally-enhanced package with earless flange.
Features
• GaN on SiC HEMT technology
• Input and output matched
• Typical pulsed CW performance, 4100 MHz, 48 V,
10 µs pulse width, 100 µs PP
- Output power at P3dB = 235 W
- Gain = 10 dB
- Efficiency = 45%
• Capable of handling 10:1 VSWR @48 V, 30 W
(WCDMA) output power
• Human Body Model Class 1A (per ANSI/ESDA/
JEDEC JS-001)
• Low thermal resistance
• Pb-free and RoHS compliant

类似零件编号 - GTRA412852FC-V1-R2

制造商	部件名	数据表	功能描述
WOLFSPEED, INC.	GTRA184602FC	693Kb / 9P	Thermally-Enhanced High Power RF GaN on SiC HEMT 460 W, 48 V, 1805 – 1880 MHz Rev. 03, 2023-03-02
	GTRA184602FC-V1	693Kb / 9P	Thermally-Enhanced High Power RF GaN on SiC HEMT 460 W, 48 V, 1805 – 1880 MHz Rev. 03, 2023-03-02
	GTRA184602FC-V1-R0	693Kb / 9P	Thermally-Enhanced High Power RF GaN on SiC HEMT 460 W, 48 V, 1805 – 1880 MHz Rev. 03, 2023-03-02
	GTRA184602FC-V1-R2	693Kb / 9P	Thermally-Enhanced High Power RF GaN on SiC HEMT 460 W, 48 V, 1805 – 1880 MHz Rev. 03, 2023-03-02
Cree, Inc	GTRA214602FC	321Kb / 8P	Thermally-Enhanced High Power RF GaN on SiC HEMT

类似说明 - GTRA412852FC-V1-R2

制造商	部件名	数据表	功能描述
Cree, Inc	GTRA364002FC	279Kb / 5P	Thermally-Enhanced High Power RF GaN on SiC HEMT 400 W, 48 V, 3400 ??3600 MHz
	GTVA263202FC	458Kb / 8P	Thermally-Enhanced High Power RF GaN on SiC HEMT 340 W, 48 V, 2620 ??2690 MHz
	GTRA263902FC	486Kb / 8P	Thermally-Enhanced High Power RF GaN on SiC HEMT 370 W, 48 V, 2495 ??2690 MHz
	GTRA374902FC	2Mb / 8P	Thermally-Enhanced High Power RF GaN on SiC HEMT 450 W, 48 V, 3600 ??3700 MHz
	GTVA261802FC	495Kb / 8P	Thermally-Enhanced High Power RF GaN on SiC HEMT 170 W, 48 V, 2620 ??2690 MHz
WOLFSPEED, INC.	GTRA360502M-V1	844Kb / 9P	Thermally-Enhanced High Power RF GaN on SiC HEMT 50 W, 48 V, 3400 – 3800 MHz Rev. 04, 2023-06-27
	GTRA262802FC	515Kb / 9P	Thermally-Enhanced High Power RF GaN on SiC HEMT 250 W, 48 V, 2490 – 2690 MHz Rev. 03.3, 2022-1-27
	GTRA374902FC	459Kb / 8P	Thermally-Enhanced High Power RF GaN on SiC HEMT 450 W, 48 V, 3600 – 3700 MHz Rev. 02.2, 2022-1-27
	GTVA212701FA	566Kb / 8P	Thermally-Enhanced High Power RF GaN on SiC HEMT 270 W, 48 V, 2110 – 2200 MHz Rev. 04.2, 2022-1-27
	GTVA261802FC	536Kb / 8P	Thermally-Enhanced High Power RF GaN on SiC HEMT 170 W, 48 V, 2620 – 2690 MHz Rev. 02.1, 2022-1-27

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