GTRA412852FC-V1-R2 datasheet(1/14 Pages) WOLFSPEED

部件名	GTRA412852FC-V1-R2

功能描述	Thermally-Enhanced High Power RF GaN on SiC HEMT 235 W, 48 V, 3700 – 4100 MHz

PDF	14 Pages

Scroll/Zoom	100%

制造商	WOLFSPEED [WOLFSPEED, INC.]

网页	https://www.wolfspeed.com/

标志

1 / 14 page

Rev. 03.1, 2022-1-27

The information in this document is subject to change without notice.

4600 Silicon Drive | Durham, NC 27703 | Tel: +1.919.313.5300

Package Types: H-37248C-4

Thermally-Enhanced High Power RF GaN on SiC HEMT

235 W, 48 V, 3700 – 4100 MHz

Description

The GTRA412852FC is a 235-watt (P

3dB) GaN on SiC high electron

mobility transistor (HEMT) for use in multi-standard cellular power

amplifier applications. It features input and output matching, high

efficiency, and a thermally-enhanced package with earless flange.

Features

• GaN on SiC HEMT technology

• Input and output matched

• Typical pulsed CW performance, 4100 MHz, 48 V,

10 µs pulse width, 100 µs PP

- Output power at P

3dB = 235 W

- Gain = 10 dB

- Efficiency = 45%

• Capable of handling 10:1 VSWR @48 V, 30 W

(WCDMA) output power

• Human Body Model Class 1A (per ANSI/ESDA/

JEDEC JS-001)

• Low thermal resistance

• Pb-free and RoHS compliant

GTRA412852FC

-60

-40

-20

0

20

40

60

0

4

8

12

16

20

24

27

32

37

42

47

Average Output Power (dBm)

Single-carrier WCDMA Drive-up

VDD = 48 V, IDQ(MAIN) = 144 mA,

VGS(PEAK) = –6.0 V, ƒ = 4100 MHz,

3GPP WCDMA signal, 10 dB PAR,

3.84 MHz bandwidth

Gain

Efficiency

PAR @ 0.01% CCDF

gtra412852fc-gr1a

RF Characteristics

Single-carrier WCDMA Specifications (tested in Wolfspeed Doherty production test fixture)

V

DD = 48 V, IDQ = 144 mA, POUT = 30 W avg, VGS(PEAK) = –6 V, ƒ = 4100 MHz, 3GPP, channel bandwidth = 3.84 MHz, peak/average =

10 dB @ 0.01% CCDF

Characteristic

Symbol

Min.

Typ.

Max.

Unit

Gain

G

ps

10

11.5

—

dB

Drain Efficiency

h

D

34.5

39

—

%

Adjacent Channel Power Ratio

ACPR

—

–29

–24

dBc

Output PAR @ 0.01% CCDF

OPAR

7

8

—

dB

Note:

All published data at T

CASE = 25°C unless otherwise indicated

ESD: Electrostatic discharge sensitive device—observe handling precautions!

类似零件编号 - GTRA412852FC-V1-R2

制造商	部件名	数据表	功能描述
WOLFSPEED, INC.	GTRA184602FC	693Kb / 9P	Thermally-Enhanced High Power RF GaN on SiC HEMT 460 W, 48 V, 1805 – 1880 MHz Rev. 03, 2023-03-02
	GTRA184602FC-V1	693Kb / 9P	Thermally-Enhanced High Power RF GaN on SiC HEMT 460 W, 48 V, 1805 – 1880 MHz Rev. 03, 2023-03-02
	GTRA184602FC-V1-R0	693Kb / 9P	Thermally-Enhanced High Power RF GaN on SiC HEMT 460 W, 48 V, 1805 – 1880 MHz Rev. 03, 2023-03-02
	GTRA184602FC-V1-R2	693Kb / 9P	Thermally-Enhanced High Power RF GaN on SiC HEMT 460 W, 48 V, 1805 – 1880 MHz Rev. 03, 2023-03-02
Cree, Inc	GTRA214602FC	321Kb / 8P	Thermally-Enhanced High Power RF GaN on SiC HEMT

More results

类似说明 - GTRA412852FC-V1-R2

制造商	部件名	数据表	功能描述
Cree, Inc	GTRA364002FC	279Kb / 5P	Thermally-Enhanced High Power RF GaN on SiC HEMT 400 W, 48 V, 3400 ??3600 MHz
	GTVA263202FC	458Kb / 8P	Thermally-Enhanced High Power RF GaN on SiC HEMT 340 W, 48 V, 2620 ??2690 MHz
	GTRA263902FC	486Kb / 8P	Thermally-Enhanced High Power RF GaN on SiC HEMT 370 W, 48 V, 2495 ??2690 MHz
	GTRA374902FC	2Mb / 8P	Thermally-Enhanced High Power RF GaN on SiC HEMT 450 W, 48 V, 3600 ??3700 MHz
	GTVA261802FC	495Kb / 8P	Thermally-Enhanced High Power RF GaN on SiC HEMT 170 W, 48 V, 2620 ??2690 MHz
WOLFSPEED, INC.	GTRA360502M-V1	844Kb / 9P	Thermally-Enhanced High Power RF GaN on SiC HEMT 50 W, 48 V, 3400 – 3800 MHz Rev. 04, 2023-06-27
	GTRA262802FC	515Kb / 9P	Thermally-Enhanced High Power RF GaN on SiC HEMT 250 W, 48 V, 2490 – 2690 MHz Rev. 03.3, 2022-1-27
	GTRA374902FC	459Kb / 8P	Thermally-Enhanced High Power RF GaN on SiC HEMT 450 W, 48 V, 3600 – 3700 MHz Rev. 02.2, 2022-1-27
	GTVA212701FA	566Kb / 8P	Thermally-Enhanced High Power RF GaN on SiC HEMT 270 W, 48 V, 2110 – 2200 MHz Rev. 04.2, 2022-1-27
	GTVA261802FC	536Kb / 8P	Thermally-Enhanced High Power RF GaN on SiC HEMT 170 W, 48 V, 2620 – 2690 MHz Rev. 02.1, 2022-1-27

More results

GTRA412852FC-V1-R2 数据表(PDF) 1 Page - WOLFSPEED, INC.

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