| 制造商 | 部件名 | 数据表 | 功能描述 |
 Infineon Technologies A... |
PTVA084007NF
|
491Kb / 9P |
Thermally-Enhanced High Power RF LDMOS FET 370 W, 48 V, 755 ??805 MHz
Rev. 03, 2017-08-30 |
|
PTRA083818NF
|
481Kb / 10P |
Thermally-Enhanced High Power RF LDMOS FET 275 W, 48 V, 733 ??805 MHz
Rev. 05.1, 2017-03-30 |
|
PTRA093818NF
|
470Kb / 10P |
Thermally-Enhanced High Power RF LDMOS FET 415 W, 48 V, 925 ??960 MHz
Rev. 05.1, 2017-08-16 |
 Cree, Inc |
PTVA082407NF
|
639Kb / 9P |
Thermally-Enhanced High Power RF LDMOS FET 240 W, 48 V, 746 ??821 MHz
|
|
PTVA084007NF
|
486Kb / 9P |
Thermally-Enhanced High Power RF LDMOS FET 370 W, 48 V, 755 ??805 MHz
|
|
PTRA083818NF
|
606Kb / 10P |
Thermally-Enhanced High Power RF LDMOS FET 275 W, 48 V, 733 ??805 MHz
|
|
PTRA084808NF
|
649Kb / 12P |
Thermally-Enhanced High Power RF LDMOS FET 550 W, 48 V, 734 ??821 MHz
|
|
PTRA087008NB
|
660Kb / 11P |
Thermally-Enhanced High Power RF LDMOS FET 650 W, 48 V, 755 ??805 MHz
|
 WOLFSPEED, INC. |
PTRA083818NF
|
708Kb / 10P |
Thermally-Enhanced High Power RF LDMOS FET 275 W, 48 V, 733 – 805 MHz
Rev. 06.2, 2022-1-27 |
|
PTRA087008NB
|
731Kb / 11P |
Thermally-Enhanced High Power RF LDMOS FET 650 W, 48 V, 755 – 805 MHz
Rev. 03.4, 2022-02-13 |