Rev. 04.2, 2022-02-13

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The information in this document is subject to change without notice.

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PTVA084007NF

Package Types: PG-HBSOF-4-2

Features

• Broadband internal input and output matching

• Target CW performance, 805 MHz, 48 V, single side

- Output power at P

3dB = 370 W

- Efficiency = 64%

- Gain = 20.8 dB

• Capable of handling 10:1 VSWR @ 48 V, 100 W

(CW) output power

• Integrated ESD protection

• Human Body Model class 2 (per ANSI/ESDA/

JEDEC JS-001)

• Low thermal resistance

• Pb-free and RoHS compliant

Thermally-Enhanced High Power RF LDMOS FET

370 W, 48 V, 755 – 805 MHz

Description

The PTVA084007NF is a 370-watt (P

3dB) LDMOS FET manufactured

with Wolfspeed’s 48-V LDMOS process. It is designed for use in

multi-standard cellular power amplifier applications. It features

a single-ended design and input and output matching that allow

for use from 755 MHz to 805 MHz.

RF Characteristics

Single-carrier WCDMA Specifications (tested in Wolfspeed production test fixture)

V

DD = 48 V, IDQ = 800 mA, POUT = 80 W avg, ƒ1 = 805 MHz, 3GPP signal, channel bandwidth = 3.84 MHz,

peak/average = 10 dB @ 0.01% CCDF.

Characteristic

Symbol

Min.

Typ.

Max.

Unit

Gain

G

ps

22

23.6

—

dB

Drain Efficiency

h

D

37

39

—

%

Adjacent Channel Power Ratio

ACPR

—

–31.6

–28.5

dBc

Output PAR @ 0.01% CCDF, 20 MHz

OPAR

6.4

7

—

dB

Note:

All published data at T

CASE = 25°C unless otherwise indicated

ESD: Electrostatic discharge sensitive device—observe handling precautions!

-60

-40

-20

0

20

40

60

4

8

12

16

20

24

28

25

30

35

40

45

50

55

Average Output Power (dBm)

Single-carrier WCDMA Drive-up

VDD = 48 V, IDQ(MAIN) = 800 mA, ƒ = 805 MHz,

3GPP WCDMA signal, PAR = 10 dB,

3.84 MHz BW

Gain

Efficiency

PAR @ 0.01% CCDF

ptva084007nf_g1