PTVA101K02EV-V1-R250 数据表(PDF) - WOLFSPEED, INC.

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PTVA101K02EV-V1-R250 数据表 (PDF) - WOLFSPEED, INC.

PTVA101K02EV-V1-R250 Datasheet PDF - WOLFSPEED, INC.


部件名	PTVA101K02EV-V1-R250

下载	PTVA101K02EV-V1-R250 下载

文件大小	511.01 Kbytes

页	9 Pages

制造商	WOLFSPEED [WOLFSPEED, INC.]

网页	https://www.wolfspeed.com/

标志

功能描述	Thermally-Enhanced High Power RF LDMOS FET 1000 W, 50 V, 1030 / 1090 MHz

PTVA101K02EV-V1-R250 Datasheet (PDF)

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PTVA101K02EV-V1-R250 Datasheet PDF - WOLFSPEED, INC.


部件名	PTVA101K02EV-V1-R250

下载	PTVA101K02EV-V1-R250 Click to download

文件大小	511.01 Kbytes

页	9 Pages

制造商	WOLFSPEED [WOLFSPEED, INC.]

网页	https://www.wolfspeed.com/

标志

功能描述	Thermally-Enhanced High Power RF LDMOS FET 1000 W, 50 V, 1030 / 1090 MHz

PTVA101K02EV-V1-R250 数据表 (HTML) - WOLFSPEED, INC.

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PTVA101K02EV-V1-R250 产品详情

Description
The PTVA101K02EV LDMOS FET is designed for use in power amplifier
applications in the 1030 MHz / 1090 MHz frequency band. Features include high gain and thermally-enhanced package with bolt-down flange.
Manufactured with Wolfspeed's advanced LDMOS process, this device
provides excellent thermal performance and superior reliability.
Features
• Broadband input matching
• High gain and efficiency
• Integrated ESD protection
• Human Body Model Class 2 (per ANSI/ESDA/JEDEC
JS-001)
• Low thermal resistance
• Pb-free and RoHS compliant
• Capable of withstanding a 10:1 load mismatch
(all phase angles) at 1000 W under MODE–S
pulse condition, (32µS ON / 18µS OFF) X 80,
LTDF = 6.4%.

类似零件编号 - PTVA101K02EV-V1-R250

制造商	部件名	数据表	功能描述
Infineon Technologies A...	PTVA101K02EV	1Mb / 9P	Thermally-Enhanced High Power RF LDMOS FET 1000 W, 50 V, 1030 / 1090 MHz Rev. 02.1, 2016-04-19
Cree, Inc	PTVA101K02EV	359Kb / 9P	Thermally-Enhanced High Power RF LDMOS FET1000 W, 50 V, 1030 / 1090 MHz
Infineon Technologies A...	PTVA101K02EVV1R0	1Mb / 9P	Thermally-Enhanced High Power RF LDMOS FET 1000 W, 50 V, 1030 / 1090 MHz Rev. 02.1, 2016-04-19
	PTVA101K02EVV1R0XTMA1	1Mb / 9P	Thermally-Enhanced High Power RF LDMOS FET 1000 W, 50 V, 1030 / 1090 MHz Rev. 02.1, 2016-04-19
	PTVA101K02EVV1R250	1Mb / 9P	Thermally-Enhanced High Power RF LDMOS FET 1000 W, 50 V, 1030 / 1090 MHz Rev. 02.1, 2016-04-19

类似说明 - PTVA101K02EV-V1-R250

制造商	部件名	数据表	功能描述
Infineon Technologies A...	PTVA120501EA	1Mb / 10P	Thermally-Enhanced High Power RF LDMOS FET 50 W, 50 V, 1200 ??1400 MHz Rev. 02.1, 2016-05-26
	PTVA101K02EV	1Mb / 9P	Thermally-Enhanced High Power RF LDMOS FET 1000 W, 50 V, 1030 / 1090 MHz Rev. 02.1, 2016-04-19
	PTVA120121M	414Kb / 9P	Thermally-Enhanced High Power RF LDMOS FET 12 W, 50 V, 500 ??1400 MHz Rev. 02.1, 2017-02-03
Cree, Inc	PTVA101K02EV	359Kb / 9P	Thermally-Enhanced High Power RF LDMOS FET1000 W, 50 V, 1030 / 1090 MHz
	PTVA030121EA	423Kb / 10P	Thermally-Enhanced High Power RF LDMOS FET 12 W, 50 V, 390 ??450 MHz
	PTVA102001EA	451Kb / 13P	Thermally-Enhanced High Power RF LDMOS FET 200 W, 50 V, 960 ??1600 MHz
	PTVA120501EA	683Kb / 10P	Thermally-Enhanced High Power RF LDMOS FET 50 W, 50 V, 1200 ??1400 MHz
STMicroelectronics	RF5L10111K0CB4	1Mb / 12P	1000 W, 50 V, 1030 to 1090 MHz RF power LDMOS transistor 22-Sep-2021
WOLFSPEED, INC.	PTVA102001EA	540Kb / 13P	Thermally-Enhanced High Power RF LDMOS FET 200 W, 50 V, 960 – 1600 MHz Rev. 05, 2023-07-10
WOLFSPEED, INC.	PTVA120501EA	695Kb / 10P	Thermally-Enhanced High Power RF LDMOS FET 50 W, 50 V, 1200 – 1400 MHz Rev. 04, 2023-07-10

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