PXAE213708NB-V1-R2 数据表(PDF) - WOLFSPEED, INC.

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PXAE213708NB-V1-R2 数据表 (PDF) - WOLFSPEED, INC.

PXAE213708NB-V1-R2 Datasheet PDF - WOLFSPEED, INC.


部件名	PXAE213708NB-V1-R2

下载	PXAE213708NB-V1-R2 下载

文件大小	707.51 Kbytes

页	8 Pages

制造商	WOLFSPEED [WOLFSPEED, INC.]

网页	https://www.wolfspeed.com/

标志

功能描述	Thermally-Enhanced High Power RF LDMOS FET 400 W, 48 V, 2110 – 2200 MHz

PXAE213708NB-V1-R2 Datasheet (PDF)

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PXAE213708NB-V1-R2 Datasheet PDF - WOLFSPEED, INC.


部件名	PXAE213708NB-V1-R2

下载	PXAE213708NB-V1-R2 Click to download

文件大小	707.51 Kbytes

页	8 Pages

制造商	WOLFSPEED [WOLFSPEED, INC.]

网页	https://www.wolfspeed.com/

标志

功能描述	Thermally-Enhanced High Power RF LDMOS FET 400 W, 48 V, 2110 – 2200 MHz

PXAE213708NB-V1-R2 数据表 (HTML) - WOLFSPEED, INC.

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PXAE213708NB-V1-R2 产品详情

Description
The PXAE213708NB is a 400-watt (P3dB) LDMOS Doherty transistor
intended for use in multi-standard cellular power amplifier
applications in the 2110 to 2200 MHz frequency band. Features
include input and output matching, high gain and thermallyenhanced package with earless flange. Manufactured with
Wolfspeed’s advanced LDMOS process, this device provides
excellent thermal performance and superior reliability
Features
• Broadband internal input and output matching
• Asymmetrical Doherty design
- Main: P3dB = 160 W Typ
- Peak: P3dB = 290 W Typ
• Typical Pulsed CW performance, 2200 MHz, 28 V,
doherty configuration, 10 µs, 10% duty cycle, class
AB
- Output power at P3dB = 400 W
- Efficiency = 60%
- Gain = 13.3 dB
• Capable of handling 10:1 VSWR @ 28 V, 54 W (1C
WCDMA) output power
• Human Body Model Class 2 (per ANSI/ESDA/JEDEC
JS-001)
• Integrated ESD protection
• Low thermal resistance
• Pb-free and RoHS compliant

类似零件编号 - PXAE213708NB-V1-R2

制造商	部件名	数据表	功能描述
Cree, Inc	PXAE213708NB-V1-R2	529Kb / 5P	Thermally-Enhanced High Power RF LDMOS FET 400 W, 29 V, 2110 ??2180 MHz

类似说明 - PXAE213708NB-V1-R2

制造商	部件名	数据表	功能描述
Infineon Technologies A...	PTFA210701E	387Kb / 10P	Thermally-Enhanced High Power RF LDMOS FET 70 W, 2110 ??2170 MHz Rev. 02.1, 2009-02-18
	PTFA210301E	198Kb / 9P	Thermally-Enhanced High Power RF LDMOS FET 30 W, 2110-2170 MHz Rev. 03, 2008-03-04
	PTFA211001E	223Kb / 9P	Thermally-Enhanced High Power RF LDMOS FET 100 W, 2110-2170 MHz Rev. 03, 2008-03-04
	PTFA211801E	583Kb / 9P	Thermally-Enhanced High Power RF LDMOS FET 180 W, 2110-2170 MHz Rev. 06, 2011-01-11
	PXAC213308FV	1Mb / 8P	Thermally-Enhanced High Power RF LDMOS FET 320 W, 28 V, 2110 ??2200 MHz Rev. 02, 2016-05-04
Cree, Inc	PXAC213308FV	518Kb / 8P	Thermally-Enhanced High Power RF LDMOS FET 320 W, 28 V, 2110 ??2200 MHz
	PTFB211503FL	578Kb / 13P	Thermally-Enhanced High Power RF LDMOS FET 150 W, 2110 ??2170 MHz
	PTFB212503FL	553Kb / 13P	Thermally-Enhanced High Power RF LDMOS FET 240 W, 2110 ??2170 MHz
	PXAE213708NB	529Kb / 5P	Thermally-Enhanced High Power RF LDMOS FET 400 W, 29 V, 2110 ??2180 MHz
WOLFSPEED, INC.	PTRA094858NF	1Mb / 9P	Thermally-Enhanced High Power RF LDMOS FET 400 W, 48 V, 859 – 960 MHz Rev. 04, 2023-06-28

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