PXAE213708NB-V1-R2 数据表(PDF) - Cree, Inc

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PXAE213708NB-V1-R2 数据表 (PDF) - Cree, Inc

PXAE213708NB-V1-R2 Datasheet PDF - Cree, Inc


部件名	PXAE213708NB-V1-R2

下载	PXAE213708NB-V1-R2 下载

文件大小	529.64 Kbytes

页	5 Pages

制造商	CREE [Cree, Inc]

网页	http://www.cree.com/

标志

功能描述	Thermally-Enhanced High Power RF LDMOS FET 400 W, 29 V, 2110 ??2180 MHz

PXAE213708NB-V1-R2 Datasheet (PDF)

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PXAE213708NB-V1-R2 Datasheet PDF - Cree, Inc


部件名	PXAE213708NB-V1-R2

下载	PXAE213708NB-V1-R2 Click to download

文件大小	529.64 Kbytes

页	5 Pages

制造商	CREE [Cree, Inc]

网页	http://www.cree.com/

标志

功能描述	Thermally-Enhanced High Power RF LDMOS FET 400 W, 29 V, 2110 ??2180 MHz

PXAE213708NB-V1-R2 数据表 (HTML) - Cree, Inc

PXAE213708NB-V1-R2 Datasheet HTML 1Page - Cree, Inc

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类似零件编号 - PXAE213708NB-V1-R2

制造商	部件名	数据表	功能描述
WOLFSPEED, INC.	PXAE213708NB-V1-R2	707Kb / 8P	Thermally-Enhanced High Power RF LDMOS FET 400 W, 48 V, 2110 – 2200 MHz Rev. 04, 2022-12-20

类似说明 - PXAE213708NB-V1-R2

制造商	部件名	数据表	功能描述
Infineon Technologies A...	PTFA210701E	387Kb / 10P	Thermally-Enhanced High Power RF LDMOS FET 70 W, 2110 ??2170 MHz Rev. 02.1, 2009-02-18
	PTFA210301E	198Kb / 9P	Thermally-Enhanced High Power RF LDMOS FET 30 W, 2110-2170 MHz Rev. 03, 2008-03-04
	PTFA211001E	223Kb / 9P	Thermally-Enhanced High Power RF LDMOS FET 100 W, 2110-2170 MHz Rev. 03, 2008-03-04
	PTFA211801E	583Kb / 9P	Thermally-Enhanced High Power RF LDMOS FET 180 W, 2110-2170 MHz Rev. 06, 2011-01-11
	PTFA212002E	227Kb / 10P	Thermally-Enhanced High Power RF LDMOS FET 200 W, 2110-2170 MHz Rev. 02, 2005-05-16
	PXFC211507SC	201Kb / 9P	Thermally-Enhanced High Power RF LDMOS FET 150 W, 28 V, 2110 ??2170 MHz Rev. 02, 2015-03-03
	PTFB212507SH	193Kb / 13P	Thermally-Enhanced High Power RF LDMOS FET 200 W, 28 V, 2110 ??2170 MHz Rev. 03, 2015-10-30
Cree, Inc	PTFB211503FL	578Kb / 13P	Thermally-Enhanced High Power RF LDMOS FET 150 W, 2110 ??2170 MHz
Cree, Inc	PTFB212503FL	553Kb / 13P	Thermally-Enhanced High Power RF LDMOS FET 240 W, 2110 ??2170 MHz
WOLFSPEED, INC.	PXAE213708NB	707Kb / 8P	Thermally-Enhanced High Power RF LDMOS FET 400 W, 48 V, 2110 – 2200 MHz Rev. 04, 2022-12-20

关于 Cree, Inc

Cree, Inc. is an American semiconductor company that specializes in the design and manufacture of wide bandgap semiconductors, including silicon carbide (SiC) and gallium nitride (GaN) devices, as well as LED lighting and power electronics products. The company was founded in 1987 and is headquartered in Durham, North Carolina.

Cree's wide bandgap semiconductors are used in a variety of applications, including power electronics, automotive, aerospace, and defense. The company's SiC and GaN devices are known for their high efficiency, high power density, and high operating temperature, making them ideal for use in applications where high performance is critical.

In addition to its wide bandgap semiconductor products, Cree also offers LED lighting products, including bulbs, fixtures, and chips, that are used in a variety of applications, including residential, commercial, and industrial lighting. Cree's LED lighting products are known for their high quality, energy efficiency, and long lifespan.

Cree has a strong focus on innovation and research and development, and is committed to developing new and innovative products that meet the evolving needs of its customers. The company has a global presence, with offices and facilities located in the United States, Europe, and Asia, and serves customers in more than 100 countries worldwide.

*此信息仅供一般参考，对于因上述信息造成的任何损失或损害，我们概不负责。

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