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PXAE213708NB-V1-R2 数据表(PDF) 4 Page - Cree, Inc

部件名 PXAE213708NB-V1-R2
功能描述  Thermally-Enhanced High Power RF LDMOS FET 400 W, 29 V, 2110 ??2180 MHz
PDF  5 Pages
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制造商  CREE [Cree, Inc]
网页  http://www.cree.com/
标志 CREE - Cree, Inc

PXAE213708NB-V1-R2 数据表(HTML) 4 Page - Cree, Inc

  PXAE213708NB-V1-R2 Datasheet HTML 1Page - Cree, Inc PXAE213708NB-V1-R2 Datasheet HTML 2Page - Cree, Inc PXAE213708NB-V1-R2 Datasheet HTML 3Page - Cree, Inc PXAE213708NB-V1-R2 Datasheet HTML 4Page - Cree, Inc PXAE213708NB-V1-R2 Datasheet HTML 5Page - Cree, Inc  
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4600 Silicon Drive | Durham, NC 27703 | www.wolfspeed.com
Rev. 01, 2018-09-26
4
Advance PXAE213708NB
Package Outline Specifications (cont.)
Package PG-HB2SOF-8-1 (bottom view)
Diagram Notes–unless otherwise specified:
1. Mold/Dam Bar/Metal protusion of 0.30mm max per side not included.
2. Fillets and radii: all radii are 0.3 mm max unless specified otherwise
3. Interpret dimensions and tolerances per ISO 8015
4. Dimensions are mm
5. Exposed metal surface are tin plated, may not be covered by mold compound
6. Does not include mold/dam bar/metal protusion.
7. All tolerances ± 0.1mm unless specified otherwise
9. All metal surfaces pre-plated, except area of cut
9. Lead thickness: 0.25 mm
10. Pins: D1, D2 – drain; G1, G2 – gate; V – V
DD; GND – ground
32.26
1
2 X 14.12
2.83
7.06
2 X 10.6
2 X 4.44
1.57
3.81
0.25
2 X 1.02
4 X 11.29
2 X 1.00
V
V
2 X 0.8
32.26
6
PG-HB2SOF-8-1_02-05-2018
G2
G1
D2
D1
2 X 0.50
31.26
0.05
G1
G2
D1
D2
Y
V
V
10. Pins: D1, D2 – drain; G1, G2 – gate; GND – ground; V – Drain video decoupling,
no DC bias



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