PXAE213708NB-V1-R2 pdf, PXAE213708NB-V1-R2 功能描述, PXAE213708NB-V1-R2 数据表, PXAE213708NB-V1-R2 view ::: ALLDATASHEET :::

部件名	PXAE213708NB-V1-R2

功能描述	Thermally-Enhanced High Power RF LDMOS FET 400 W, 29 V, 2110 ??2180 MHz

文件大小	529.64 Kbytes

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制造商	CREE [Cree, Inc]

网页	http://www.cree.com/

标志

类似零件编号 - PXAE213708NB-V1-R2

制造商	部件名	数据表	功能描述
WOLFSPEED, INC.	PXAE213708NB-V1-R2	707Kb / 8P	Thermally-Enhanced High Power RF LDMOS FET 400 W, 48 V, 2110 – 2200 MHz Rev. 04, 2022-12-20

制造商	部件名	数据表	功能描述
Infineon Technologies A...	PTFA210701E	387Kb / 10P	Thermally-Enhanced High Power RF LDMOS FET 70 W, 2110 ??2170 MHz Rev. 02.1, 2009-02-18
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Cree, Inc	PTFB211503FL	578Kb / 13P	Thermally-Enhanced High Power RF LDMOS FET 150 W, 2110 ??2170 MHz
Cree, Inc	PTFB212503FL	553Kb / 13P	Thermally-Enhanced High Power RF LDMOS FET 240 W, 2110 ??2170 MHz
WOLFSPEED, INC.	PXAE213708NB	707Kb / 8P	Thermally-Enhanced High Power RF LDMOS FET 400 W, 48 V, 2110 – 2200 MHz Rev. 04, 2022-12-20