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SCT020HU120G3AG 数据表 (PDF) - STMicroelectronics
SCT020HU120G3AG Datasheet PDF - STMicroelectronics
部件名 SCT020HU120G3AG
下载  SCT020HU120G3AG 下载
文件大小   598.55 Kbytes
页   15 Pages
制造商  STMICROELECTRONICS [STMicroelectronics]
网页  http://www.st.com
标志 STMICROELECTRONICS - STMicroelectronics
功能描述 Automotive-grade silicon carbide Power MOSFET 1200 V, 18.5 mΩ typ., 100 A in an HU3PAK package

SCT020HU120G3AG Datasheet (PDF)

Go To PDF Page 下载 数据表
SCT020HU120G3AG Datasheet PDF - STMicroelectronics

部件名 SCT020HU120G3AG
下载  SCT020HU120G3AG Click to download

文件大小   598.55 Kbytes
页   15 Pages
制造商  STMICROELECTRONICS [STMicroelectronics]
网页  http://www.st.com
标志 STMICROELECTRONICS - STMicroelectronics
功能描述 Automotive-grade silicon carbide Power MOSFET 1200 V, 18.5 mΩ typ., 100 A in an HU3PAK package

SCT020HU120G3AG 数据表 (HTML) - STMicroelectronics


SCT020HU120G3AG 产品详情

Features
• AEC-Q101 qualified
• Very low RDS(on) over the entire temperature range
• High speed switching performances
• Very fast and robust intrinsic body diode
• Source sensing pin for increased efficiency

Applications
• Main inverter (electric traction)
• DC/DC converter for EV/HEV
• On board charger (OBC)

Description
This silicon carbide Power MOSFET device has been developed using ST’s
advanced and innovative 3rd generation SiC MOSFET technology. The device
features a very low RDS(on) over the entire temperature range combined with
low capacitances and very high switching operations, which improve application
performance in frequency, energy efficiency, system size and weight reduction.




类似零件编号 - SCT020HU120G3AG

制造商部件名数据表功能描述
logo
STMicroelectronics		 SCT020H120G3AG STMICROELECTRONICS-SCT020H120G3AG Datasheet
362Kb / 14P		 Automotive-grade silicon carbide Power MOSFET 1200 V, 18.5 mΩ typ., 100 A in an H²PAK-7 package
27-Sep-2022
More results


类似说明 - SCT020HU120G3AG

制造商部件名数据表功能描述
logo
STMicroelectronics		 SCTW100N120G2AG STMICROELECTRONICS-SCTW100N120G2AG Datasheet
217Kb / 11P		 Automotive-grade silicon carbide Power MOSFET 1200 V, 75 A,30 mΩ (typ., TJ=25 °C), in an HiP247 package
23-Jul-2020
SCTW60N120G2AG STMICROELECTRONICS-SCTW60N120G2AG Datasheet
197Kb / 11P		 Automotive-grade silicon carbide Power MOSFET 1200 V, 52 A, 45 mΩ (typ., TJ = 25 °C) in an HiP247 package
18-May-2020
SCTWA40N120G2AG STMICROELECTRONICS-SCTWA40N120G2AG Datasheet
257Kb / 12P		 Automotive‑grade silicon carbide Power MOSFET 1200 V, 75 mΩ typ., 33 A in an HiP247 long leads package
22-Nov-2021
SCTWA60N120G2AG STMICROELECTRONICS-SCTWA60N120G2AG Datasheet
242Kb / 12P		 Automotive-grade silicon carbide Power MOSFET 1200 V, 45 mΩ typ., 52 A in an HiP247 long leads package
16-Dec-2020
SCT020H120G3AG STMICROELECTRONICS-SCT020H120G3AG Datasheet
362Kb / 14P		 Automotive-grade silicon carbide Power MOSFET 1200 V, 18.5 mΩ typ., 100 A in an H²PAK-7 package
27-Sep-2022
SCT025H120G3AG STMICROELECTRONICS-SCT025H120G3AG Datasheet
369Kb / 14P		 Automotive-grade silicon carbide Power MOSFET 1200 V, 27 mΩ typ., 55 A in an H²PAK-7 package
28-Nov-2022
SCT040H120G3AG STMICROELECTRONICS-SCT040H120G3AG Datasheet
386Kb / 14P		 Automotive-grade silicon carbide Power MOSFET 1200 V, 40 mΩ typ., 40 A in an H²PAK-7 package
14-Oct-2022
SCT070H120G3AG STMICROELECTRONICS-SCT070H120G3AG Datasheet
396Kb / 14P		 Automotive-grade silicon carbide Power MOSFET 1200 V, 63 mΩ typ., 30 A in an H²PAK-7 package
04-Apr-2023
SCT10N120AG STMICROELECTRONICS-SCT10N120AG Datasheet
238Kb / 14P		 Automotive-grade silicon carbide Power MOSFET 1200 V, 12 A, 520 mΩ (typ., TJ = 150 °C) in an HiP247 package
21-Sep-2022
SCTH60N120G2-7AG STMICROELECTRONICS-SCTH60N120G2-7AG Datasheet
356Kb / 14P		 Automotive-grade silicon carbide Power MOSFET 1200 V, 45 mΩ typ., 55 A in an H²PAK-7 package
02-Aug-2021
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关于 STMicroelectronics

Stmicroelectronics是位于瑞士日内瓦的跨国电子和半导体制造商。

该公司为汽车，工业和消费者市场的各种应用提供了广泛的产品，包括微控制器，传感器，功率放大器和集成电路。

Stmicroelectronics成立于1987年，在1​​00多个国家 /地区开展业务，是世界上最大的半导体公司之一。

*此信息仅供一般参考，对于因上述信息造成的任何损失或损害，我们概不负责。




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