1. General description
Nexperia introduces leading edge Silicon Carbide (SiC) Schottky diode for ultra-high performance,
low loss, high efficiency power conversion applications. The SiC Schottky diode is encapsulated in
a Real-2-Pin (R2P) TO-220-2 through-hole power plastic package. The product offers temperature
independent capacitive turn-off, zero recovery switching behavior combined with an outstanding
figure-of-merit (QC x VF). The Merged PiN Schottky (MPS) diode improves the robustness
expressed in a high IFSM.

2. Features and benefits
• Zero forward and reverse recovery
• Reduced system costs
• Temperature independent fast and smooth switching performance
• Outstanding figure-of-merit (Qc x VF)
• High IFSM capability
• High power density
• System miniaturization
• Reduced EMI

3. Applications
• Switch Mode Power Supply (SMPS)
• AC-DC and DC-DC converter
• Battery charging infrastructure
• Server and telecom power supply
• Uninterruptible Power Supply (UPS)
• Photovoltaic inverters