1 Features
• 650V 35mΩ GaN power FET with integrated gate
driver
– >200V/ns FET hold-off
– Adjustable slew rates for optimization of
switching performance and EMI mitigation
• 10V/ns to 100V/ns turn-on slew rates
• 10V/ns to full speed turn-off slew rates
– Operates with supply pin and input logic pin
voltage range from 9V to 26V
• Robust Protection
– Cycle-by-cycle overcurrent and latched shortcircuit
protection with <300ns response
– Withstands 720V surge while hard-switching
– Self-protection from internal overtemperature
and UVLO monitoring
• 9.8mm × 11.6mm TOLL package witht thermal pad

2 Applications
• Merchant network and server PSU
• Merchant telecom rectifiers
• Solar inverters and industrial motor drives
• Uninterruptible power supplies

3 Description
The LMG365xR035 GaN FET with integrated driver
and protection is targeted at switch-mode power
converters and enables designers to achieve new
levels of power density and efficiency.
Adjustable gate driver strength allows the control
of turn-on and maximum turn-off slew rates
independently, which can be used to actively control
EMI and optimize switching performance. Turn on
slew rate can be varied from 10V/ns to 100V/ns, while
the turn off slew rate can be limited from 10V/ns to
a maximum based on the magnitude of load current.
Protection features include under-voltage lockout
(UVLO), cycle-by-cycle overcurrent limit, short-circuit
and overtemperature protection. The LMG3651R035
provides a 5V LDO output on LDO5V pin that
can be used to power external digital isolator. The
LMG3656R035 includes the zero-voltage detection
(ZVD) feature which provides a pulse output from the
ZVD pin when zero-voltage switching is realized. The
LMG3657R035 includes the zero-current detection
(ZCD) feature that sets the ZCD pin high when the
drain-to-source current is negative and transitions to
low upon detecting the zero-crossing point.