| 制造商 | 部件名 | 数据表 | 功能描述 |
 QT Optoelectronics |
H24B1
|
68Kb / 1P |
THE H24B SERIES CONSISTS OF A GALLIUM ARSENIDE INFRARED EMITTING DIODE COUPLED WITH A SILICON PHOTOTRANSISTOR
|
 KODENSHI_AUK CORP. |
PC-16T1
|
218Kb / 3P |
Photocoupler(Photocoupler consists of a Gallium Arsenide Infrared Emitting)
|
|
PC-17K1C
|
218Kb / 3P |
Photocoupler(Photocoupler consists of a Gallium Arsenide Infrared Emitting)
|
 Texas Instruments |
TIL119
|
226Kb / 6P |
Gallium Arsenide Diode Infrared Source Optically Coupled to a Silicon NPN Darlinrton-Connected Phototransistor
|
 List of Unclassifed Man... |
CLED155
|
54Kb / 2P |
Gallium Aluminum Arsenide Infrared Emitting Diode
|
 Everlight Electronics C... |
ITR9702
|
235Kb / 8P |
Gallium arsenide infrared emitting diode which is coupled with a silicon photo transistor in a plastic housing
|
|
ITR8105
|
175Kb / 8P |
Gallium Arsenide Infrared Emitting Diode
|
 Toshiba Semiconductor |
TLP595G
|
318Kb / 8P |
The Toshiba TLP595G consists of an aluminum gallium arsenide infrared emitting diode optically coupled to a photo-MOSFET
|
 Everlight Electronics C... |
ITR8010
|
253Kb / 8P |
GALLIUM ARSENIDE INFRARED EMITTING DIODE
|
|
ITR8117
|
241Kb / 8P |
Gallium arsenide infrared emitting diode
|