| 制造商 | 部件名 | 数据表 | 功能描述 |
 QT Optoelectronics |
H24B1
|
68Kb / 1P |
THE H24B SERIES CONSISTS OF A GALLIUM ARSENIDE INFRARED EMITTING DIODE COUPLED WITH A SILICON PHOTOTRANSISTOR
|
 Texas Instruments |
TIL157
|
238Kb / 6P |
GaAs-Diode Light Source Optically Coupled to a Silicon NPN Darlington-Connected Phototransistor
|
 List of Unclassifed Man... |
ITR8102
|
206Kb / 8P |
gallium arsenide infrared emitting diode
|
|
CLED155
|
54Kb / 2P |
Gallium Aluminum Arsenide Infrared Emitting Diode
|
 Texas Instruments |
TIL103
|
373Kb / 4P |
GALLIUM ARSENIDE DIODE INFRARED SOURCE OPTICALLY COUPLED TO A HIGH-GAIN N-P-N SILICON PHOTOTRANSISTOR
|
 Everlight Electronics C... |
ITR8105
|
175Kb / 8P |
Gallium Arsenide Infrared Emitting Diode
|
 Toshiba Semiconductor |
TLP595G
|
318Kb / 8P |
The Toshiba TLP595G consists of an aluminum gallium arsenide infrared emitting diode optically coupled to a photo-MOSFET
|
 Everlight Electronics C... |
ITR8010
|
253Kb / 8P |
GALLIUM ARSENIDE INFRARED EMITTING DIODE
|
|
ITR8117
|
241Kb / 8P |
Gallium arsenide infrared emitting diode
|
 Toshiba Semiconductor |
TLP4592G
|
217Kb / 6P |
The Toshiba TLP4592G consists of an aluminum gallium arsenide infrared emitting diode optically coupled to a photo-MOSFET in a DIP package.
|