DESCRIPTION
The M29F040 is a non-volatile memory that may be erased electrically at the block level, and programmed Byte-by-Byte.
   
■ M29F040 is replaced by the M29F040B
■ 5V ± 10% SUPPLY VOLTAGE for PROGRAM,
    ERASE and READ OPERATIONS
■ FAST ACCESS TIME: 70ns
■ BYTE PROGRAMMING TIME: 10µs typical
■ ERASE TIME
    – Block: 1.0 sec typical
    – Chip: 2.5 sec typical
■ PROGRAM/ERASE CONTROLLER (P/E.C.)
    – Program Byte-by-Byte
    – Data Polling and Toggle bits Protocol for
        P/E.C. Status
■ MEMORY ERASE in BLOCKS
    – 8 Uniform Blocks of 64 KBytes each
    – Block Protection
    – Multiblock Erase
■ ERASE SUSPEND and RESUME MODES
■ LOW POWER CONSUMPTION
    – Read mode: 8mA typical (at 12MHz)
    – Stand-by mode: 25µA typical
    – Automatic Stand-by mode
■ 100,000 PROGRAM/ERASE CYCLES per
    BLOCK
■ 20 YEARS DATA RETENTION
    – Defectivity below 1ppm/year
■ ELECTRONIC SIGNATURE
    – Manufacturer Code: 20h
    – Device Code: E2h