DESCRIPTION
This Power MOSFET is the latest development of STMicroelectronics unique " Single Feature Size " strip-based process. The resulting transistor shows extremely high packing density for low on-resistance, rugged avalanche characteristics and less critical alignment steps therefore a remarkable manufacturing reproducibility.

■ TYPICAL RDS(on) = 0.013 Ω
■ EXCEPTIONAL dv/dt CAPABILITY
■ LOW GATE CHARGE A 100°C
■ APPLICATION ORIENTED CHARACTERIZATION
■ FOR THROUGH-HOLE VERSION CONTACT SALES OFFICE

APPLICATIONS
■ HIGH CURRENT, HIGH SPEED SWITCHING SOLENOID AND RELAY DRIVERS
■ MOTOR CONTROL, AUDIO AMPLIFIERS
■ DC-DC & DC-AC CONVERTERS IN HIGH PERFORMANCE VRMs
■ AUTOMOTIVE ENVIRONMENT (INJECTION, ABS, AIR-BAG, LAMPDRIVERS, Etc.)