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STB3015L 数据表(PDF) 2 Page - STMicroelectronics

部件名 STB3015L
功能描述  N - CHANNEL 30V - 0.013 ohm - 40A - D2PAK/TO-220 STripFETO POWER MOSFET
PDF  6 Pages
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制造商  STMICROELECTRONICS [STMicroelectronics]
网页  http://www.st.com
标志 STMICROELECTRONICS - STMicroelectronics

STB3015L 数据表(HTML) 2 Page - STMicroelectronics

  STB3015L Datasheet HTML 1Page - STMicroelectronics STB3015L Datasheet HTML 2Page - STMicroelectronics STB3015L Datasheet HTML 3Page - STMicroelectronics STB3015L Datasheet HTML 4Page - STMicroelectronics STB3015L Datasheet HTML 5Page - STMicroelectronics STB3015L Datasheet HTML 6Page - STMicroelectronics  
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THERMAL DATA
Rthj-case
Rthj-amb
Rthc-sink
Tl
Thermal Resistance Junction-case
Max
Thermal Resistance Junction-ambient
Max
Thermal Resistance Case-sink
Typ
Maximum Lead Temperature For Soldering Purpose
1.88
62.5
0.5
300
oC/W
oC/W
oC/W
oC
AVALANCHE CHARACTERISTICS
Symbol
Parameter
Max Value
Unit
IAR
Avalanche Current, Repetitive or Not-Repetitive
(pulse width limited by Tj max)
40
A
EAS
Single Pulse Avalanche Energy
(starting Tj = 25
oC, ID = IAR, VDD = 15 V)
200
mJ
ELECTRICAL CHARACTERISTICS (Tcase = 25
oC unless otherwise specified)
OFF
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
V(BR)DSS
Drain-source
Breakdown Voltage
ID = 250
µA
VGS = 0
30
V
IDSS
Zero Gate Voltage
Drain Current (VGS = 0)
VDS = Max Rating
VDS = Max Rating
Tc = 125
oC
1
10
µA
µA
IGSS
Gate-body Leakage
Current (VDS = 0)
VGS =
± 20 V
± 100
nA
ON (
∗)
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
VGS(th)
Gate Threshold
Voltage
VDS = VGS
ID = 250
µA
1
2.5
V
RDS(on)
Static Drain-source On
Resistance
VGS = 10 V ID = 20 A
VGS = 5 V
ID = 20 A
0.013
0.0155
0.022
Ω
Ω
ID(on)
On State Drain Current VDS > ID(on) x RDS(on)max
VGS = 10 V
40
A
DYNAMIC
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
gfs (
∗)
Forward
Transconductance
VDS > ID(on) x RDS(on)max
ID =20 A
15
20
S
Ciss
Coss
Crss
Input Capacitance
Output Capacitance
Reverse Transfer
Capacitance
VDS = 25 V
f = 1 MHz
VGS = 0
2500
1200
400
pF
pF
pF
STB3015L
2/5



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