| 制造商 | 部件名 | 数据表 | 功能描述 |
 Vishay Siliconix |
V10150S
|
166Kb / 5P |
High-Voltage Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.59 V at IF = 5 A
19-May-08 |
|
V20120SG
|
166Kb / 5P |
High-Voltage Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.54 V at IF = 5 A
19-May-08 |
|
V30120S
|
165Kb / 5P |
High-Voltage Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.43 V at IF = 5 A
19-May-08 |
|
VB30100S-M3
|
88Kb / 4P |
High-Voltage Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.39 V at IF = 5 A
15-May-13 |
|
VBT3080S-M3
|
88Kb / 4P |
Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.39 V at IF = 5 A
14-May-13 |
|
VFT3080S-M3
|
89Kb / 4P |
Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.39 V at IF = 5 A
11-Sep-13 |
|
VT1060C-E3
|
156Kb / 6P |
Dual High Voltage Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.39 V at IF = 2.5 A
14-Dec-16 |
|
VT1060C-M3
|
133Kb / 5P |
Dual High-Voltage Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.39 V at IF = 2.5 A
15-Dec-16 |
|
VT3080S-E3
|
157Kb / 6P |
Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.39 V at IF = 5 A
14-Dec-16 |
|
VBT1060C-M3
|
89Kb / 4P |
Dual High-Voltage Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.39 V at IF = 2.5 A
14-May-13 |