| 制造商 | 部件名 | 数据表 | 功能描述 |
 NTE Electronics |
NTE21256
|
42Kb / 6P |
262,144-Bit Dynamic Random Access Memory (DRAM)
|
 Texas Instruments |
TMS4256
|
1Mb / 23P |
262,144-BIT DYNAMIC RANDOM-ACCESS MEMORIES
|
 Hitachi Semiconductor |
HM514260C
|
260Kb / 27P |
262,144-word x 16-bit Dynamic Random Access Memory
|
 fujitsu semiconductor |
MB81464-12
|
1Mb / 22P |
MOS 262,144 BIT DYNAMIC RANDOM ACCESS MEMORY
|
 Hitachi Semiconductor |
HM514170C
|
195Kb / 26P |
262,144-word x 16-bit Dynamic Random Access Memory
|
 ACCUTEK MICROCIRCUIT CO... |
AK48256S
|
113Kb / 2P |
262,144 X 8 Bit MOS Dynamic Random Access Memory
|
|
AK532256AW
|
67Kb / 2P |
262,144 Word by 32 Bit CMOS Dynamic Random Access Memory
|
|
AK532256W
|
69Kb / 2P |
262,144 Word by 32 Bit CMOS Dynamic Random Access Memory
|
|
AK536256W
|
86Kb / 2P |
262,144 Word by 36 Bit CMOS Dynamic Random Access Memory
|
|
AK58256AG
|
90Kb / 2P |
262,144 x 8 bit CMOS Dynamic Random Access Memory
|