2SC5338 数据表(PDF) - Renesas Technology Corp

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2SC5338 数据表 (PDF) - Renesas Technology Corp

2SC5338 Datasheet PDF - Renesas Technology Corp


部件名	2SC5338

下载	2SC5338 下载

文件大小	186.52 Kbytes

页	10 Pages

制造商	RENESAS [Renesas Technology Corp]

网页	http://www.renesas.com

标志

功能描述	NPN SILICON RF TRANSISTOR FOR HIGH-FREQUENCY LOW DISTORTION AMPLIFIER

2SC5338 Datasheet (PDF)

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2SC5338 Datasheet PDF - Renesas Technology Corp


部件名	2SC5338

下载	2SC5338 Click to download

文件大小	186.52 Kbytes

页	10 Pages

制造商	RENESAS [Renesas Technology Corp]

网页	http://www.renesas.com

标志

功能描述	NPN SILICON RF TRANSISTOR FOR HIGH-FREQUENCY LOW DISTORTION AMPLIFIER

2SC5338 数据表 (HTML) - Renesas Technology Corp

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2SC5338 Datasheet HTML 10Page - Renesas Technology Corp

2SC5338 产品详情

NPN SILICON RF TRANSISTOR FOR HIGH-FREQUENCY LOW DISTORTION AMPLIFIER 4-PIN POWER MINIMOLD

FEATURES
• High gain: S21e2 = 10 dB TYP. @ VCE = 5 V, IC = 50 mA, f = 1 GHz
• Low distortion, low voltage: IM2 = −55 dB TYP., IM3 = −76 dB TYP. @ VCE = 5 V, IC = 50 mA, Vin = 105 dBµV/75Ω
• 4-pin power minimold package with improved gain from the 2SC4703

类似零件编号 - 2SC5338

制造商	部件名	数据表	功能描述
NEC	2SC5338	71Kb / 10P	NPN EPITAXIAL SILICON TRANSISTOR HIGH FREQUENCY LOW DISTORTION AMPLIFIER
Renesas Technology Corp	2SC5338-A	137Kb / 2P	RF & Microwave device
Renesas Technology Corp	2SC5338	186Kb / 10P	NPN SILICON RF TRANSISTOR FOR HIGH-FREQUENCY LOW DISTORTION AMPLIFIER 4-PIN POWER MINIMOLD

类似说明 - 2SC5338

制造商	部件名	数据表	功能描述
NEC	2SC5336	49Kb / 6P	NPN EPITAXIAL SILICON TRANSISTOR HIGH FREQUENCY LOW DISTORTION AMPLIFIER
	2SC5337	59Kb / 8P	NPN EPITAXIAL SILICON TRANSISTOR HIGH FREQUENCY LOW DISTORTION AMPLIFIER
	2SC5338	71Kb / 10P	NPN EPITAXIAL SILICON TRANSISTOR HIGH FREQUENCY LOW DISTORTION AMPLIFIER
	NE856M02	63Kb / 7P	NPN EPITAXIAL SILICON TRANSISTOR HIGH FREQUENCY LOW DISTORTION AMPLIFIER
California Eastern Labs	NE856M02	206Kb / 8P	NPN EPITAXIAL SILICON TRANSISTOR HIGH FREQUENCY LOW DISTORTION AMPLIFIER
Renesas Technology Corp	2SC5336	180Kb / 10P	NPN SILICON RF TRANSISTOR FOR HIGH-FREQUENCY LOW DISTORTION AMPLIFIER
California Eastern Labs	2SC5337	877Kb / 6P	NPN Silicon RF Transistor for High-Frequency Low Distortion Amplifier 4-Pin Power Minimold
California Eastern Labs	2SC5336	1Mb / 7P	NPN SILICON RF TRANSISTOR FOR HIGH-FREQUENCY LOW DISTORTION AMPLIFIER
Renesas Technology Corp	2SC5337	99Kb / 7P	NPN Silicon RF Transistor for High-Frequency Low Distortion Amplifier 4-Pin Power Minimold
Renesas Technology Corp	2SC5336	180Kb / 10P	NPN SILICON RF TRANSISTOR FOR HIGH-FREQUENCY LOW DISTORTION AMPLIFIER 4-PIN POWER MINIMOLD

关于 Renesas Technology Corp

Renesas Technology Corp是一家日本半导体公司，可为汽车，工业和消费者市场中的各种应用提供广泛的微控制器，芯片以及模拟和电源设备。
该公司于2010年通过NEC Electronics Corporation and Renesas Technology Corporation合并成立。
Renesas是世界上最大的微控制器供应商之一，并以其在物联网（IoT），人工智能（AI）和汽车电子产品等领域的高级技术开发方面的专业知识而闻名。
该公司在20多个国家 /地区开展业务，其产品用于广泛的应用。

*此信息仅供一般参考，对于因上述信息造成的任何损失或损害，我们概不负责。

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