2SC5336 数据表(PDF) - California Eastern Labs

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2SC5336 数据表 (PDF) - California Eastern Labs

2SC5336 Datasheet PDF - California Eastern Labs


部件名	2SC5336

下载	2SC5336 下载

文件大小	1035.34 Kbytes

页	7 Pages

制造商	CEL [California Eastern Labs]

网页	http://www.cel.com

标志

功能描述	NPN SILICON RF TRANSISTOR FOR HIGH-FREQUENCY LOW DISTORTION AMPLIFIER

2SC5336 Datasheet (PDF)

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2SC5336 Datasheet PDF - California Eastern Labs


部件名	2SC5336

下载	2SC5336 Click to download

文件大小	1035.34 Kbytes

页	7 Pages

制造商	CEL [California Eastern Labs]

网页	http://www.cel.com

标志

功能描述	NPN SILICON RF TRANSISTOR FOR HIGH-FREQUENCY LOW DISTORTION AMPLIFIER

2SC5336 数据表 (HTML) - California Eastern Labs

2SC5336 Datasheet HTML 1Page - California Eastern Labs

2SC5336 Datasheet HTML 2Page - California Eastern Labs

2SC5336 Datasheet HTML 3Page - California Eastern Labs

2SC5336 Datasheet HTML 4Page - California Eastern Labs

2SC5336 Datasheet HTML 5Page - California Eastern Labs

2SC5336 Datasheet HTML 6Page - California Eastern Labs

2SC5336 Datasheet HTML 7Page - California Eastern Labs

2SC5336 产品详情

NPN SILICON RF TRANSISTOR FOR HIGH-FREQUENCY LOW DISTORTION AMPLIFIER 4-PIN POWER MINIMOLD

FEATURES
• High gain: |S21e|2 = 12 dB TYP. @ VCE = 10 V, IC = 20 mA, f = 1 GHz
• 4-pin power minimold package with improved gain from the NE85634 / 2SC3357

类似零件编号 - 2SC5336

制造商	部件名	数据表	功能描述
NEC	2SC5336	49Kb / 6P	NPN EPITAXIAL SILICON TRANSISTOR HIGH FREQUENCY LOW DISTORTION AMPLIFIER
Renesas Technology Corp	2SC5336	180Kb / 10P	NPN SILICON RF TRANSISTOR FOR HIGH-FREQUENCY LOW DISTORTION AMPLIFIER
	2SC5336-A	137Kb / 2P	RF & Microwave device
	2SC5336-T1	180Kb / 10P	NPN SILICON RF TRANSISTOR FOR HIGH-FREQUENCY LOW DISTORTION AMPLIFIER
	2SC5336	180Kb / 10P	NPN SILICON RF TRANSISTOR FOR HIGH-FREQUENCY LOW DISTORTION AMPLIFIER 4-PIN POWER MINIMOLD

类似说明 - 2SC5336

制造商	部件名	数据表	功能描述
NEC	2SC5336	49Kb / 6P	NPN EPITAXIAL SILICON TRANSISTOR HIGH FREQUENCY LOW DISTORTION AMPLIFIER
	2SC5337	59Kb / 8P	NPN EPITAXIAL SILICON TRANSISTOR HIGH FREQUENCY LOW DISTORTION AMPLIFIER
	2SC5338	71Kb / 10P	NPN EPITAXIAL SILICON TRANSISTOR HIGH FREQUENCY LOW DISTORTION AMPLIFIER
	NE856M02	63Kb / 7P	NPN EPITAXIAL SILICON TRANSISTOR HIGH FREQUENCY LOW DISTORTION AMPLIFIER
California Eastern Labs	NE856M02	206Kb / 8P	NPN EPITAXIAL SILICON TRANSISTOR HIGH FREQUENCY LOW DISTORTION AMPLIFIER
Renesas Technology Corp	2SC5336	180Kb / 10P	NPN SILICON RF TRANSISTOR FOR HIGH-FREQUENCY LOW DISTORTION AMPLIFIER
Renesas Technology Corp	2SC5338	186Kb / 10P	NPN SILICON RF TRANSISTOR FOR HIGH-FREQUENCY LOW DISTORTION AMPLIFIER
California Eastern Labs	2SC5337	877Kb / 6P	NPN Silicon RF Transistor for High-Frequency Low Distortion Amplifier 4-Pin Power Minimold
Renesas Technology Corp	2SC5337	99Kb / 7P	NPN Silicon RF Transistor for High-Frequency Low Distortion Amplifier 4-Pin Power Minimold
Renesas Technology Corp	2SC5336	180Kb / 10P	NPN SILICON RF TRANSISTOR FOR HIGH-FREQUENCY LOW DISTORTION AMPLIFIER 4-PIN POWER MINIMOLD

关于 California Eastern Labs

California Eastern Laboratories (CEL) is a leading semiconductor manufacturer and technology company that specializes in the design, development, and production of advanced RF and microwave components and systems. The company is headquartered in Santa Clara, California, and has been in operation for over 60 years.

CEL is known for its extensive range of high-performance RF and microwave products, including RF switches, mixers, amplifiers, and modules. The company also offers custom design services for customers with specific needs. CEL's products are widely used in various industries, including wireless communication, aerospace and defense, automotive, and medical.

CEL is also the exclusive sales and marketing partner of Renesas Electronics Corporation for North and South America, providing Renesas' broad portfolio of semiconductors to customers in the region.

*此信息仅供一般参考，对于因上述信息造成的任何损失或损害，我们概不负责。

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