The RF MOSFET Line
RF Power Field-Effect Transistor
N–Channel Enhancement–Mode MOSFET

Designed for broadband commercial and military applications at frequencies to 175 MHz. The high power, high gain and broadband performance of this device makes possible solid state transmitters for FM broadcast or TV channel frequency bands.

• Guaranteed Performance at 175 MHz, 28 V:
   Output Power — 300 W
   Gain — 12 dB (14 dB Typ)
   Efficiency — 50%
• Low Thermal Resistance — 0.35°C/W
• Ruggedness Tested at Rated Output Power
• Nitride Passivated Die for Enhanced Reliability