The HGTG20N60C3D is a MOS gated high voltage switching device combining the best features of MOSFETs and bipolar transistors. This device has the high input impedance of a MOSFET and the low on-state conduction loss of a bipolar transistor. The much lower on-state voltage drop varies only moderately between 25°C and 150°C. The IGBT used is development type TA49178. The diode used in anti-parallel with the IGBT is the RHRP3060 (TA49063).

Features

• 45A, 600V, TC= 25°C

• 600V Switching SOA Capability

• Typical Fall Time. . . . . . . . . . . . . . . .  108ns at TJ= 150°C

• Short Circuit Rating

• Low Conduction Loss

• Hyperfast Anti-Parallel Diode