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STS20N3LLH6 数据表 (PDF) - STMicroelectronics
STS20N3LLH6 Datasheet PDF - STMicroelectronics
部件名 STS20N3LLH6
下载  STS20N3LLH6 下载
文件大小   548.94 Kbytes
页   13 Pages
制造商  STMICROELECTRONICS [STMicroelectronics]
网页  http://www.st.com
标志 STMICROELECTRONICS - STMicroelectronics
功能描述 Low gate drive power losses

STS20N3LLH6 Datasheet (PDF)

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STS20N3LLH6 Datasheet PDF - STMicroelectronics

部件名 STS20N3LLH6
下载  STS20N3LLH6 Click to download

文件大小   548.94 Kbytes
页   13 Pages
制造商  STMICROELECTRONICS [STMicroelectronics]
网页  http://www.st.com
标志 STMICROELECTRONICS - STMicroelectronics
功能描述 Low gate drive power losses

STS20N3LLH6 数据表 (HTML) - STMicroelectronics


STS20N3LLH6 产品详情

Description
This product utilizes the 6th generation of design rules of ST’s proprietary STripFET™ technology, with a new gate structure.The resulting Power MOSFET exhibits the lowest RDS(on) in all

Features
■ RDS(on) * Qg industry benchmark
■ Extremely low on-resistance RDS(on)
■ High avalanche ruggedness
■ Low gate drive power losses
■ Very low switching gate charge

Applications
■ Switching applications




类似零件编号 - STS20N3LLH6

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关于 STMicroelectronics

Stmicroelectronics是位于瑞士日内瓦的跨国电子和半导体制造商。

该公司为汽车，工业和消费者市场的各种应用提供了广泛的产品，包括微控制器，传感器，功率放大器和集成电路。

Stmicroelectronics成立于1987年，在1​​00多个国家 /地区开展业务，是世界上最大的半导体公司之一。

*此信息仅供一般参考，对于因上述信息造成的任何损失或损害，我们概不负责。




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