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STR2N2VH5 数据表 (PDF) - STMicroelectronics
STR2N2VH5 Datasheet PDF - STMicroelectronics
部件名 STR2N2VH5
下载  STR2N2VH5 下载
文件大小   882.78 Kbytes
页   13 Pages
制造商  STMICROELECTRONICS [STMicroelectronics]
网页  http://www.st.com
标志 STMICROELECTRONICS - STMicroelectronics
功能描述 Low gate drive power loss

STR2N2VH5 Datasheet (PDF)

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STR2N2VH5 Datasheet PDF - STMicroelectronics

部件名 STR2N2VH5
下载  STR2N2VH5 Click to download

文件大小   882.78 Kbytes
页   13 Pages
制造商  STMICROELECTRONICS [STMicroelectronics]
网页  http://www.st.com
标志 STMICROELECTRONICS - STMicroelectronics
功能描述 Low gate drive power loss

STR2N2VH5 数据表 (HTML) - STMicroelectronics


STR2N2VH5 产品详情

Description
This device is an N-channel Power MOSFET developed using STMicroelectronics’ STripFET™ H5 technology. The device has been optimized to achieve very low on-state resistance, contributing to a FoM that is among the best in its class. SOT-23 1 2 3

Features
■ Low on-resistance RDS(on)
■ High avalanche ruggedness
■ Low gate drive power loss

Applications
■ Switching applications




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关于 STMicroelectronics

Stmicroelectronics是位于瑞士日内瓦的跨国电子和半导体制造商。

该公司为汽车，工业和消费者市场的各种应用提供了广泛的产品，包括微控制器，传感器，功率放大器和集成电路。

Stmicroelectronics成立于1987年，在1​​00多个国家 /地区开展业务，是世界上最大的半导体公司之一。

*此信息仅供一般参考，对于因上述信息造成的任何损失或损害，我们概不负责。




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