STR2N2VH5 datasheet(4/13 Pages) STMICROELECTRONICS

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Electrical characteristics

STR2N2VH5

4/13

DocID023799 Rev 4

Electrical characteristics

(TC = 25 °C unless otherwise specified)

Table 4. On /off states

Symbol

Parameter

Test conditions

Min.

Typ.

Max.

Unit

V(BR)DSS

Drain-source

breakdown voltage

VGS = 0, ID = 1 mA

IDSS

Zero gate voltage

drain current

VGS = 0, VDS = 20 V

µA

VGS = 0, VDS = 20 V,

TC=125 °C

µA

IGSS

Gate-body leakage

current

VDS = 0, VGS = ± 8 V

± 100

VGS(th)

Gate threshold voltage VDS = VGS, ID = 250 µA

0.7

RDS(on)

Static drain-source

on-resistance

VGS = 4.5 V, ID = 2 A

0.025

0.03

Ω

VGS = 2.5 V, ID = 2 A

0.031

0.04

Ω

Table 5. Dynamic

Symbol

Parameter

Test conditions

Min.

Typ.

Max.

Unit

Ciss

Input capacitance

VGS = 0, VDS = 16 V, f = 1 MHz

367

Coss

Output capacitance

Crss

Reverse transfer

capacitance

-16

Total gate charge

VDD = 16 V, ID = 2 A,

VGS = 4.5 V

(see Figure 14)

-4.6

Qgs

Gate-source charge

0.9

Qgd

Gate-drain charge

Table 6. Switching times

Symbol

Parameter

Test conditions

Min.

Typ.

Max.

Unit

td(on)

Voltage delay time

VDD = 16 V, ID = 2 A,

RG = 4.7 Ω, VGS = 4.5 V

(see Figure 15 and Figure 18)

-4.8

tr (V)

Voltage rise time

14.4

td (off)

Current fall time

Crossing time

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