This is information on a product in full production.

July 2014

DocID023799 Rev 4

1/13

STR2N2VH5

N-channel 20 V, 0.025

Ω typ., 2.3 A STripFET™ H5

Power MOSFET in a SOT-23 package

Datasheet — production data

Figure 1. Internal schematic diagram

Features

• High avalanche ruggedness

• Low gate drive power loss

Applications

• Switching applications

Description

This device is an N-channel Power MOSFET

developed using STMicroelectronics’ STripFET™

H5 technology. The device has been optimized to

achieve very low on-state resistance, contributing

to a FoM that is among the best in its class.

SOT-23

1

2

3

Order code

STR2N2VH5 20 V 0.03

Ω (V

Table 1. Device summary

Order code

Marking

Packages

Packaging

STR2N2VH5

STD1

SOT-23

Tape and reel

www.st.com