STR2N2VH5 datasheet(6/13 Pages) STMICROELECTRONICS

部件名	STR2N2VH5

功能描述	Low gate drive power loss

PDF	13 Pages

Scroll/Zoom	100%

制造商	STMICROELECTRONICS [STMicroelectronics]

网页	http://www.st.com

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6 / 13 page

Electrical characteristics

STR2N2VH5

6/13

DocID023799 Rev 4

2.1

Electrical characteristics (curves)

Figure 2. Safe operating area

Figure 3. Thermal impedance

Figure 4. Output characteristics

Figure 5. Transfer characteristics

Figure 6. Gate charge vs gate-source voltage

Figure 7. Static drain-source on-resistance

0.1

VDS(V)

(A)

Operation

this

area

Limited

max

DS(on)

1ms

100µs

0.1

Tj=150°C

Tpcb=25°C

Single pulse

10ms

AM18126v1

Single pulse

δ=0.5

0.05

0.02

0.01

0.1

0.2

tp(s)

-4

-3

-2

-1

-5

-3

-2

-1

pcb

AM18127v1

VDS(V)

(A)

0.5V

1.5V

VGS=2.5, 3.5, 4.5, 5.5, 6.5 V

AM18128v1

0.4

VGS(V)

0.8

(A)

0.2

0.6

VDS=4V

1.2

AM18129v1

VGS

Qg(nC)

(V)

VDD=10V

ID=2A

AM18130v1

RDS(on)

24.8

24.4

ID(A)

Ω)

1.5

2.5

25.2

VGS=4.5V

3.5

25.6

AM18132v1

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