STGW60H65DRF 数据表(PDF) - STMicroelectronics

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STGW60H65DRF 数据表 (PDF) - STMicroelectronics

STGW60H65DRF Datasheet PDF - STMicroelectronics


部件名	STGW60H65DRF

下载	STGW60H65DRF 下载

文件大小	2066.06 Kbytes

页	13 Pages

制造商	STMICROELECTRONICS [STMicroelectronics]

网页	http://www.st.com

标志

功能描述	60 A, 650 V field stop trench gate IGBT with Ultrafast diode

STGW60H65DRF Datasheet (PDF)

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STGW60H65DRF Datasheet PDF - STMicroelectronics


部件名	STGW60H65DRF

下载	STGW60H65DRF Click to download

文件大小	2066.06 Kbytes

页	13 Pages

制造商	STMICROELECTRONICS [STMicroelectronics]

网页	http://www.st.com

标志

功能描述	60 A, 650 V field stop trench gate IGBT with Ultrafast diode

STGW60H65DRF 数据表 (HTML) - STMicroelectronics

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STGW60H65DRF 产品详情

Description
This device is an IGBT developed using an advanced proprietary trench gate and field stop structure. This IGBT is the result of a compromise between conduction and switching losses, maximizing the efficiency of high switching frequency converters. Furthermore, a slightly positive VCE(sat) temperature coefficient and very tight parameter distribution result in easier paralleling operation. TO-247 1 2 3

类似零件编号 - STGW60H65DRF

制造商	部件名	数据表	功能描述
STMicroelectronics	STGW60H65DF	1Mb / 13P	60 A, 650 V field stop trench gate IGBT with very fast diode 09-Jan-2013
	STGW60H65DFB	1Mb / 19P	Low thermal resistance 17-Apr-2015
	STGW60H65DFB	689Kb / 21P	Trench gate field-stop 650 V, 60 A high speed HB series IGBT 22-Jul-2019
	STGW60H65DFB-4	556Kb / 15P	Trench gate field-stop 650 V, 60 A high speed HB series IGBT 20-Jun-2019
	STGW60H65DFB	689Kb / 21P	Trench gate field-stop 650 V, 60 A high speed HB series IGBT 22-Jul-2019

类似说明 - STGW60H65DRF

制造商	部件名	数据表	功能描述
STMicroelectronics	STGW50H60DF	1Mb / 12P	50 A, 600 V field stop trench gate IGBT with Ultrafast diode 26-Jul-2012
	STGW60H65F	1Mb / 12P	60 A, 650 V field stop trench gate IGBT 31-Jul-2012
	STGW60H65DF	1Mb / 13P	60 A, 650 V field stop trench gate IGBT with very fast diode 09-Jan-2013
ON Semiconductor	FGH60T65SHD	677Kb / 9P	IGBT - Field Stop, Trench 650 V, 60 A December, 2020 ??Rev. 3
	FGH60T65SQD-F155	560Kb / 10P	IGBT - Field Stop, Trench 650 V, 60 A November, 2019 ??Rev. 3
	FGH75T65SQD	532Kb / 10P	IGBT - Field Stop, Trench 650 V, 75 A April, 2020 ??Rev. 5
STMicroelectronics	STGW60H65DFB-4	556Kb / 15P	Trench gate field-stop 650 V, 60 A high speed HB series IGBT 20-Jun-2019
	STGW60H65F	1Mb / 14P	60 A, 650 V field stop trench gate IGBT 09-Jan-2013
	STGW60H65DFB	689Kb / 21P	Trench gate field-stop 650 V, 60 A high speed HB series IGBT 22-Jul-2019
Fairchild Semiconductor	FGA6560WDF	2Mb / 9P	650 V, 60 A Field Stop Trench IGBT Rev. 1.1 April 2015

关于 STMicroelectronics

Stmicroelectronics是位于瑞士日内瓦的跨国电子和半导体制造商。

该公司为汽车，工业和消费者市场的各种应用提供了广泛的产品，包括微控制器，传感器，功率放大器和集成电路。

Stmicroelectronics成立于1987年，在100多个国家 /地区开展业务，是世界上最大的半导体公司之一。

*此信息仅供一般参考，对于因上述信息造成的任何损失或损害，我们概不负责。

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