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STD20P3H6AG 数据表 (PDF) - STMicroelectronics
STD20P3H6AG Datasheet PDF - STMicroelectronics
部件名 STD20P3H6AG
下载  STD20P3H6AG 下载
文件大小   728.87 Kbytes
页   15 Pages
制造商  STMICROELECTRONICS [STMicroelectronics]
网页  http://www.st.com
标志 STMICROELECTRONICS - STMicroelectronics
功能描述 High avalanche ruggedness

STD20P3H6AG Datasheet (PDF)

Go To PDF Page 下载 数据表
STD20P3H6AG Datasheet PDF - STMicroelectronics

部件名 STD20P3H6AG
下载  STD20P3H6AG Click to download

文件大小   728.87 Kbytes
页   15 Pages
制造商  STMICROELECTRONICS [STMicroelectronics]
网页  http://www.st.com
标志 STMICROELECTRONICS - STMicroelectronics
功能描述 High avalanche ruggedness

STD20P3H6AG 数据表 (HTML) - STMicroelectronics


STD20P3H6AG 产品详情

Description
This device is a P-channel Power MOSFET developed using the STripFET™ F6 technology, with a new trench gate structure. The resulting Power MOSFET exhibits very low RDS(on) in all




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类似说明 - STD20P3H6AG

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关于 STMicroelectronics

Stmicroelectronics是位于瑞士日内瓦的跨国电子和半导体制造商。

该公司为汽车，工业和消费者市场的各种应用提供了广泛的产品，包括微控制器，传感器，功率放大器和集成电路。

Stmicroelectronics成立于1987年，在1​​00多个国家 /地区开展业务，是世界上最大的半导体公司之一。

*此信息仅供一般参考，对于因上述信息造成的任何损失或损害，我们概不负责。




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