STFI10NK60Z 数据表(PDF)

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STFI10NK60Z 数据表 (PDF) - STMicroelectronics

STFI10NK60Z Datasheet PDF - STMicroelectronics


部件名	STFI10NK60Z

下载	STFI10NK60Z 下载

文件大小	530.48 Kbytes

页	13 Pages

制造商	STMICROELECTRONICS [STMicroelectronics]

网页	http://www.st.com

标志

功能描述	Extremely high dv/dt capability

STFI10NK60Z Datasheet (PDF)

下载数据表


部件名	STFI10NK60Z

下载	STFI10NK60Z Click to download

文件大小	530.48 Kbytes

页	13 Pages

制造商	STMICROELECTRONICS [STMicroelectronics]

网页	http://www.st.com

标志

功能描述	Extremely high dv/dt capability

STFI10NK60Z 数据表 (HTML) - STMicroelectronics

STFI10NK60Z Datasheet HTML 1Page - STMicroelectronics

STFI10NK60Z Datasheet HTML 2Page - STMicroelectronics

STFI10NK60Z Datasheet HTML 3Page - STMicroelectronics

STFI10NK60Z Datasheet HTML 4Page - STMicroelectronics

STFI10NK60Z Datasheet HTML 5Page - STMicroelectronics

STFI10NK60Z Datasheet HTML 6Page - STMicroelectronics

STFI10NK60Z Datasheet HTML 7Page - STMicroelectronics

STFI10NK60Z Datasheet HTML 8Page - STMicroelectronics

STFI10NK60Z Datasheet HTML 9Page - STMicroelectronics

STFI10NK60Z Datasheet HTML 10Page - STMicroelectronics

STFI10NK60Z 产品详情

Description
This device is an N-channel Zener-protected Power MOSFET developed using STMicroelectronics' SuperMESH™ technology, achieved through optimization of ST's wellestablished strip-based PowerMESH™ layout. In addition to a significant reduction in onresistance, this device is designed to ensure a high level of dv/dt capability for the most demanding applications.

Features
■ Fully insulated and low profile package with increased creepage path from pin to heatsink plate
■ Extremely high dv/dt capability
■ 100% avalanche tested
■ Gate charge minimized

Applications
■ Switching applications

类似零件编号 - STFI10NK60Z

制造商	部件名	数据表	功能描述
STMicroelectronics	STFI10N62K3	954Kb / 17P	N-channel 620 V, 0.68 廓 typ., 8.4 A SuperMESH3? 13-Sep-2012
	STFI10N65K3	958Kb / 17P	N-channel 650 V, 0.75 Ohm typ., 10 A Zener-protected SuperMESH3 Power MOSFET in TO-220FP, I2PAKFP and TO-220 packages 14-Nov-2012
	STFI10N65K3	1Mb / 21P	N-channel 650 V, 0.75 Ω typ., 10 A SuperMESH3™ Power MOSFETs in D2PAK, TO-220FP, I2PAKFP and TO-220 packages 05-Aug-2013

More results

类似说明 - STFI10NK60Z

制造商	部件名	数据表	功能描述
Silikron Semiconductor ...	SSF2715	452Kb / 6P	Extremely high dv/dt capability
	SSF4N60	654Kb / 6P	Extremely high dv/dt capability
	SSF7N60	439Kb / 6P	Extremely high dv/dt capability
	SSF8N60	440Kb / 6P	Extremely high dv/dt capability
	SSF8N65	439Kb / 6P	Extremely high dv/dt capability
STMicroelectronics	STP35N60DM2	733Kb / 13P	Extremely high dv/dt ruggedness 10-Sep-2015
	STB9NK80Z	987Kb / 15P	Extremely high dv/dt capability 12-Jul-2013
	STW70N60DM2	724Kb / 12P	Extremely high dv/dt ruggedness 09-Dec-2015
	STW72N60DM2AG	728Kb / 12P	Extremely high dv/dt ruggedness 09-Dec-2015
	STB6N52K3	1Mb / 22P	Extremely high dv/dt capability 21-Feb-2011

More results

关于 STMicroelectronics

Stmicroelectronics是位于瑞士日内瓦的跨国电子和半导体制造商。

该公司为汽车，工业和消费者市场的各种应用提供了广泛的产品，包括微控制器，传感器，功率放大器和集成电路。

Stmicroelectronics成立于1987年，在100多个国家 /地区开展业务，是世界上最大的半导体公司之一。

*此信息仅供一般参考，对于因上述信息造成的任何损失或损害，我们概不负责。

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